Interfacial layer defects and instabilities in HFO2 MOS structures

J. T. Ryan, P. M. Lenahan

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Scopus citations

Abstract

Recent studies have demonstrated that deep level defects very near the Si/dielectric boundary are important reliability problems in HfO2 based devices. In this study, we provide a partial identification of the chemical and structural nature of an electrically active center which is present in the interfacial layer (IL) of HfO2 based devices. The defect almost certainly involves an oxygen deficient silicon probably weakly coupled to a nearby hafnium atom.

Original languageEnglish (US)
Title of host publication46th Annual 2008 IEEE International Reliability Physics Symposium Proceedings, IRPS
Pages665-666
Number of pages2
DOIs
StatePublished - Sep 17 2008
Event46th Annual 2008 IEEE International Reliability Physics Symposium, IRPS - Phoenix, AZ, United States
Duration: Apr 27 2008May 1 2008

Publication series

NameIEEE International Reliability Physics Symposium Proceedings
ISSN (Print)1541-7026

Other

Other46th Annual 2008 IEEE International Reliability Physics Symposium, IRPS
CountryUnited States
CityPhoenix, AZ
Period4/27/085/1/08

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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    Ryan, J. T., & Lenahan, P. M. (2008). Interfacial layer defects and instabilities in HFO2 MOS structures. In 46th Annual 2008 IEEE International Reliability Physics Symposium Proceedings, IRPS (pp. 665-666). [4558978] (IEEE International Reliability Physics Symposium Proceedings). https://doi.org/10.1109/RELPHY.2008.4558978