Interfacial layer defects and instabilities in HFO2 MOS structures

J. T. Ryan; P. M. Lenahan

doi:10.1109/RELPHY.2008.4558978

Interfacial layer defects and instabilities in HFO₂ MOS structures

J. T. Ryan, P. M. Lenahan

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

2 Scopus citations

Abstract

Recent studies have demonstrated that deep level defects very near the Si/dielectric boundary are important reliability problems in HfO₂ based devices. In this study, we provide a partial identification of the chemical and structural nature of an electrically active center which is present in the interfacial layer (IL) of HfO₂ based devices. The defect almost certainly involves an oxygen deficient silicon probably weakly coupled to a nearby hafnium atom.

Original language	English (US)
Title of host publication	46th Annual 2008 IEEE International Reliability Physics Symposium Proceedings, IRPS
Pages	665-666
Number of pages	2
DOIs	https://doi.org/10.1109/RELPHY.2008.4558978
State	Published - 2008
Event	46th Annual 2008 IEEE International Reliability Physics Symposium, IRPS - Phoenix, AZ, United States Duration: Apr 27 2008 → May 1 2008

Publication series

Name	IEEE International Reliability Physics Symposium Proceedings
ISSN (Print)	1541-7026

Other

Other	46th Annual 2008 IEEE International Reliability Physics Symposium, IRPS
Country/Territory	United States
City	Phoenix, AZ
Period	4/27/08 → 5/1/08

All Science Journal Classification (ASJC) codes

Engineering(all)

Access to Document

10.1109/RELPHY.2008.4558978

Cite this

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title = "Interfacial layer defects and instabilities in HFO2 MOS structures",

abstract = "Recent studies have demonstrated that deep level defects very near the Si/dielectric boundary are important reliability problems in HfO2 based devices. In this study, we provide a partial identification of the chemical and structural nature of an electrically active center which is present in the interfacial layer (IL) of HfO2 based devices. The defect almost certainly involves an oxygen deficient silicon probably weakly coupled to a nearby hafnium atom.",

author = "Ryan, {J. T.} and Lenahan, {P. M.}",

year = "2008",

doi = "10.1109/RELPHY.2008.4558978",

language = "English (US)",

isbn = "9781424420506",

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pages = "665--666",

booktitle = "46th Annual 2008 IEEE International Reliability Physics Symposium Proceedings, IRPS",

note = "46th Annual 2008 IEEE International Reliability Physics Symposium, IRPS ; Conference date: 27-04-2008 Through 01-05-2008",

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Ryan, JT & Lenahan, PM 2008, Interfacial layer defects and instabilities in HFO₂ MOS structures. in 46th Annual 2008 IEEE International Reliability Physics Symposium Proceedings, IRPS., 4558978, IEEE International Reliability Physics Symposium Proceedings, pp. 665-666, 46th Annual 2008 IEEE International Reliability Physics Symposium, IRPS, Phoenix, AZ, United States, 4/27/08. https://doi.org/10.1109/RELPHY.2008.4558978

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AU - Lenahan, P. M.

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AB - Recent studies have demonstrated that deep level defects very near the Si/dielectric boundary are important reliability problems in HfO2 based devices. In this study, we provide a partial identification of the chemical and structural nature of an electrically active center which is present in the interfacial layer (IL) of HfO2 based devices. The defect almost certainly involves an oxygen deficient silicon probably weakly coupled to a nearby hafnium atom.

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