The strain-relief at internal dielectric interfaces between interfaces between SiO 2 and alternative dielectrics was investigated. A scaling relationship for the density of bond-strain induced defects at internal dielectric interfaces was developed using bond constraint theory. It was observed that the interfaces between SiO 2 and ZrO 2, HfO 2 and Zr and Hf silicate alloys showed a strain-induced self-organization after annealing to temperature of ∼600-800 °C, producing a diphasic interfacial transition region . On the other hand, strain-induced self-organization did not occur at interfaces between SiO 2 and Al 2O 3 alloys for temperature up to 1000 °C.
|Original language||English (US)|
|Number of pages||8|
|Journal||Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures|
|State||Published - Jul 1 2004|
All Science Journal Classification (ASJC) codes
- Condensed Matter Physics
- Electrical and Electronic Engineering