Interfacial strain-induced self-organization in semiconductor dielectric gate stacks. II. Strain-relief at internal dielectric interfaces between SiO 2 and alternative gate dielectrics

G. Lucovsky, Jon-Paul Maria, J. C. Phillips

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23 Scopus citations

Abstract

The strain-relief at internal dielectric interfaces between interfaces between SiO 2 and alternative dielectrics was investigated. A scaling relationship for the density of bond-strain induced defects at internal dielectric interfaces was developed using bond constraint theory. It was observed that the interfaces between SiO 2 and ZrO 2, HfO 2 and Zr and Hf silicate alloys showed a strain-induced self-organization after annealing to temperature of ∼600-800 °C, producing a diphasic interfacial transition region . On the other hand, strain-induced self-organization did not occur at interfaces between SiO 2 and Al 2O 3 alloys for temperature up to 1000 °C.

Original languageEnglish (US)
Pages (from-to)2097-2104
Number of pages8
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume22
Issue number4
DOIs
StatePublished - Jul 1 2004

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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