Interfacial structure and ferroelectric properties of PZT/SrRuO3 heterostructures on MISCUT (001)SrTiO3

K. Wasa, Y. Ichikawa, H. Adachi, I. Kanno, K. Setsune, D. G. Schlom, Susan E. Trolier-McKinstry, Q. Gan, C. B. Eom

Research output: Contribution to journalConference articlepeer-review

2 Scopus citations

Abstract

A heterostructure of (001)PZT(53/47)/(110)SrRuO3(SRO) was deposited on a miscut (001)SrTiO3(ST) substrate by a magnetron sputtering. The film thickness of the PZT and SRO ranged from 100 nm to 200 nm. The miscut angles were typically 1.7°. The heterostructure was grown on the miscut ST substrates under a step-flow growth. The heterostructure was tightly bonded to the ST substrate without an interfacial layer. The sputtered PZT thin films were tetragonally deformed with c=4.16 angstrom (bulk c-lattice parameter, 4.14 angstrom). A room temperature dielectric constant of the PZT thin films was 200 to 300 at 1 kHz. The P/E hysteresis measurements indicated that the saturation polarization Ps was 40 μ C/cm2 with a coercive field Ec of 400 kV/cm to 500 kV/cm. The Ec observed was one order of magnitude higher than a bulk value for PZT. The high values of Ec were observed in a perfect c-domain orientation without an interfacial layer or 90° domains.

Original languageEnglish (US)
Pages (from-to)39-46
Number of pages8
JournalIntegrated Ferroelectrics
Volume26
Issue number1
DOIs
StatePublished - Jan 1 1999
EventThe 11th International Symposium on Integrated Ferroelectrics (ISIF99) - Colorado Springs, CO, USA
Duration: Mar 7 1999Mar 10 1999

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Control and Systems Engineering
  • Ceramics and Composites
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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