Interfacial structure of photoresist thin films in developer solutions

Vivek M. Prabhu, Bryan D. Vogt, Wen Li Wu, Jack F. Douglas, Eric K. Lin, Sushil K. Satija, Dario L. Goldfarb, Hiroshi Ito

Research output: Contribution to journalConference article

1 Scopus citations

Abstract

A depth profile of the base developer counterion concentration within thin photoresist films was measured in-situ using contrast variant specular neutron reflectivity to characterize the initial swelling stage of the film dissolution. We find a substantial counterion depletion near the substrate and an enrichment near the periphery of the film extending into the solution. These observations challenge our understanding of the charge distribution in photoresist and polyelectrolyte films and are important for understanding film dissolution in medical and technological applications.

Original languageEnglish (US)
Article number34
Pages (from-to)292-301
Number of pages10
JournalProgress in Biomedical Optics and Imaging - Proceedings of SPIE
Volume5753
Issue numberI
DOIs
StatePublished - Sep 19 2005
EventAdvances in Resist Technology and Processing XXII - San Jose, CA, United States
Duration: Feb 28 2005Mar 2 2005

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Biomaterials
  • Atomic and Molecular Physics, and Optics
  • Radiology Nuclear Medicine and imaging

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    Prabhu, V. M., Vogt, B. D., Wu, W. L., Douglas, J. F., Lin, E. K., Satija, S. K., Goldfarb, D. L., & Ito, H. (2005). Interfacial structure of photoresist thin films in developer solutions. Progress in Biomedical Optics and Imaging - Proceedings of SPIE, 5753(I), 292-301. [34]. https://doi.org/10.1117/12.598956