Internal magnetic field in thin ZnSe epilayers

S. Ghosh, N. P. Stern, B. Maertz, D. D. Awschalom, G. Xiang, M. Zhu, N. Samarth

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

Strain-induced spin splitting is observed and characterized using pump-probe Kerr rotation spectroscopy in n-ZnSe epilayers grown on GaAs substrates. The spin splitting energies are mapped out as a function of pump-probe separation, applied voltage, and temperature in a series of samples of varying epilayer thicknesses and compressive strain arising from epilayer-substrate lattice mismatch. The strain is independently quantified using photoluminescence and X-ray diffraction measurements. The authors observe that the magnitude of the spin splitting increases with applied voltage and temperature and is highly crystal direction dependent, vanishing along [1 1- 0].

Original languageEnglish (US)
Article number242116
JournalApplied Physics Letters
Volume89
Issue number24
DOIs
StatePublished - Dec 29 2006

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magnetic fields
pumps
probes
electric potential
photoluminescence
temperature
diffraction
spectroscopy
crystals
x rays
energy

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

Ghosh, S., Stern, N. P., Maertz, B., Awschalom, D. D., Xiang, G., Zhu, M., & Samarth, N. (2006). Internal magnetic field in thin ZnSe epilayers. Applied Physics Letters, 89(24), [242116]. https://doi.org/10.1063/1.2404600
Ghosh, S. ; Stern, N. P. ; Maertz, B. ; Awschalom, D. D. ; Xiang, G. ; Zhu, M. ; Samarth, N. / Internal magnetic field in thin ZnSe epilayers. In: Applied Physics Letters. 2006 ; Vol. 89, No. 24.
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Ghosh, S, Stern, NP, Maertz, B, Awschalom, DD, Xiang, G, Zhu, M & Samarth, N 2006, 'Internal magnetic field in thin ZnSe epilayers', Applied Physics Letters, vol. 89, no. 24, 242116. https://doi.org/10.1063/1.2404600

Internal magnetic field in thin ZnSe epilayers. / Ghosh, S.; Stern, N. P.; Maertz, B.; Awschalom, D. D.; Xiang, G.; Zhu, M.; Samarth, N.

In: Applied Physics Letters, Vol. 89, No. 24, 242116, 29.12.2006.

Research output: Contribution to journalArticle

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T1 - Internal magnetic field in thin ZnSe epilayers

AU - Ghosh, S.

AU - Stern, N. P.

AU - Maertz, B.

AU - Awschalom, D. D.

AU - Xiang, G.

AU - Zhu, M.

AU - Samarth, N.

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AB - Strain-induced spin splitting is observed and characterized using pump-probe Kerr rotation spectroscopy in n-ZnSe epilayers grown on GaAs substrates. The spin splitting energies are mapped out as a function of pump-probe separation, applied voltage, and temperature in a series of samples of varying epilayer thicknesses and compressive strain arising from epilayer-substrate lattice mismatch. The strain is independently quantified using photoluminescence and X-ray diffraction measurements. The authors observe that the magnitude of the spin splitting increases with applied voltage and temperature and is highly crystal direction dependent, vanishing along [1 1- 0].

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Ghosh S, Stern NP, Maertz B, Awschalom DD, Xiang G, Zhu M et al. Internal magnetic field in thin ZnSe epilayers. Applied Physics Letters. 2006 Dec 29;89(24). 242116. https://doi.org/10.1063/1.2404600