Internal photoemission measurement of Schottky barrier height for Ni on AlGaN/GaN heterostructure

L. S. Yu, Q. J. Xing, D. Qiao, S. S. Lau, K. S. Boutros, J. M. Redwing

Research output: Contribution to journalArticlepeer-review

45 Scopus citations

Abstract

The internal photoemission method was used to measure the Schottky barrier height of Ni on AlGaN/GaN heterostructures. A barrier height of 1.31 eV was found for the Ni/Al0.15Ga0.85N/GaN heterojunction structure, as compared to a barrier height of 1.28 and 1.02 eV for the Ni/Al0.15Ga0.85N and Ni/GaN Schottky diodes, respectively.

Original languageEnglish (US)
Pages (from-to)3917-3919
Number of pages3
JournalApplied Physics Letters
Volume73
Issue number26
DOIs
StatePublished - 1998

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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