TY - JOUR
T1 - Interplay between fractional quantum Hall liquid and crystal phases at low filling
AU - Zuo, Zheng Wei
AU - Balram, Ajit C.
AU - Pu, Songyang
AU - Zhao, Jianyun
AU - Jolicoeur, Thierry
AU - Wójs, A.
AU - Jain, J. K.
N1 - Funding Information:
The authors are grateful to M. P. Zaletel and R. S. K. Mong for their insights on the issue of ground-state energy with DMRG. The work at Penn State (S.P., J.Z., J.K.J.) was supported by the US Department of Energy under Grant No. DE-SC0005042. Some portions of this research were conducted with Advanced CyberInfrastructure computational resources provided by The Institute for CyberScience at The Pennsylvania State University and the Nandadevi supercomputer, which is maintained and supported by the Institute of Mathematical Science's High-Performance Computing Center. This work was also supported by the Polish NCN Grant No. 2014/14/A/ST3/00654 (A.W.). We thank Wrocław Centre for Networking and Supercomputing and Academic Computer Centre CYFRONET, both parts of PL-Grid Infrastructure. Some of the numerical calculations were performed using the diagham package, for which we are grateful to its authors. Z.W.Z. was also supported by the National Natural Science Foundation of China under Grants No. 11604081 and No. 11447008. We thank the Tianhe-2 platform at the National Supercomputer Center in Guangzhou for technical support and a generous allocation of CPU time. One of us (Th.J.) acknowledges CEA-DRF for providing CPU time on the supercomputer COBALT at GENCI-CCRT.
Publisher Copyright:
© 2020 American Physical Society.
PY - 2020/8/15
Y1 - 2020/8/15
N2 - The nature of the state at low Landau-level filling factors has been a long-standing puzzle in the field of the fractional quantum Hall effect (FQHE). While theoretical calculations suggest that a crystal is favored at filling factors νâ‰16, experiments show, at somewhat elevated temperatures, minima in the longitudinal resistance that are associated with fractional quantum Hall effect at ν=17, 211, 213, 317, 319, 19, 215, and 217, which belong to the standard sequences ν=n/(6n±1) and n/(8n±1). To address this paradox, we investigate the nature of some of the low-ν states, specifically ν=17, 213, and 19, by variational Monte Carlo, density matrix renormalization group, and exact diagonalization methods. We conclude that in the thermodynamic limit, these are likely to be incompressible fractional quantum Hall liquids, albeit with strong short-range crystalline correlations. This suggests a natural explanation for the experimentally observed behavior and a rich phase diagram that admits, in the low-disorder limit, a multitude of crystal-FQHE liquid transitions as the filling factor is reduced.
AB - The nature of the state at low Landau-level filling factors has been a long-standing puzzle in the field of the fractional quantum Hall effect (FQHE). While theoretical calculations suggest that a crystal is favored at filling factors νâ‰16, experiments show, at somewhat elevated temperatures, minima in the longitudinal resistance that are associated with fractional quantum Hall effect at ν=17, 211, 213, 317, 319, 19, 215, and 217, which belong to the standard sequences ν=n/(6n±1) and n/(8n±1). To address this paradox, we investigate the nature of some of the low-ν states, specifically ν=17, 213, and 19, by variational Monte Carlo, density matrix renormalization group, and exact diagonalization methods. We conclude that in the thermodynamic limit, these are likely to be incompressible fractional quantum Hall liquids, albeit with strong short-range crystalline correlations. This suggests a natural explanation for the experimentally observed behavior and a rich phase diagram that admits, in the low-disorder limit, a multitude of crystal-FQHE liquid transitions as the filling factor is reduced.
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U2 - 10.1103/PhysRevB.102.075307
DO - 10.1103/PhysRevB.102.075307
M3 - Article
AN - SCOPUS:85090160573
SN - 2469-9950
VL - 102
JO - Physical Review B-Condensed Matter
JF - Physical Review B-Condensed Matter
IS - 7
M1 - 075307
ER -