We calculate in the effective-mass approximation the current-voltage characteristic for an AlxGa1-xAs-GaAs-AlxGa1-xAs heterostructure. Our calculation includes the effect of electron-electron interaction in a self-consistent way. We show that charge accumulation in the quantum well is large enough to produce a bistability in the negative-differential-resistance region of the current-voltage curve.
All Science Journal Classification (ASJC) codes
- Condensed Matter Physics