Intrinsic bistability in resonant-tunneling structures

Jorge Osvaldo Sofo, C. A. Balseiro

Research output: Contribution to journalArticle

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Abstract

We calculate in the effective-mass approximation the current-voltage characteristic for an AlxGa1-xAs-GaAs-AlxGa1-xAs heterostructure. Our calculation includes the effect of electron-electron interaction in a self-consistent way. We show that charge accumulation in the quantum well is large enough to produce a bistability in the negative-differential-resistance region of the current-voltage curve.

Original languageEnglish (US)
Pages (from-to)7292-7295
Number of pages4
JournalPhysical Review B
Volume42
Issue number11
DOIs
Publication statusPublished - Jan 1 1990

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All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics

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