By fabricating and characterizing multi-layered MoS2-based field-effect transistors in a four terminal configuration, we demonstrate that the two terminal-configurations tend to underestimate the carrier mobility μ due to the Schottky barriers at the contacts. For a back-gated two-terminal configuration, we observe mobilities as high as 91 cm 2 V - 1 s - 1 which is considerably smaller than 306.5 cm 2 V - 1 s - 1 as extracted from the same device when using a four-terminal configuration. This indicates that the intrinsic mobility of MoS2 on SiO2 is significantly larger than the values previously reported, and provides a quantitative method to evaluate the charge transport through the contacts.
|Original language||English (US)|
|Journal||Applied Physics Letters|
|State||Published - Mar 25 2013|
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)