Intrinsic carrier mobility of multi-layered MoS2 field-effect transistors on SiO2

N. R. Pradhan, D. Rhodes, Q. Zhang, S. Talapatra, M. Terrones, P. M. Ajayan, L. Balicas

Research output: Contribution to journalArticlepeer-review

102 Scopus citations


By fabricating and characterizing multi-layered MoS2-based field-effect transistors in a four terminal configuration, we demonstrate that the two terminal-configurations tend to underestimate the carrier mobility μ due to the Schottky barriers at the contacts. For a back-gated two-terminal configuration, we observe mobilities as high as 91 cm 2 V - 1 s - 1 which is considerably smaller than 306.5 cm 2 V - 1 s - 1 as extracted from the same device when using a four-terminal configuration. This indicates that the intrinsic mobility of MoS2 on SiO2 is significantly larger than the values previously reported, and provides a quantitative method to evaluate the charge transport through the contacts.

Original languageEnglish (US)
Article number123105
JournalApplied Physics Letters
Issue number12
StatePublished - Mar 25 2013

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)


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