TY - JOUR
T1 - Intrinsic Dipole Coupling in 2D van der Waals Ferroelectrics for Gate-Controlled Switchable Rectifier
AU - Dai, Mingjin
AU - Li, Kai
AU - Wang, Fakun
AU - Hu, Yunxia
AU - Zhang, Jia
AU - Zhai, Tianyou
AU - Yang, Bin
AU - Fu, Yongqing
AU - Cao, Wenwu
AU - Jia, Dechang
AU - Zhou, Yu
AU - Hu, Ping An
N1 - Funding Information:
M.D. and K.L. contributed equally to this work. This work was supported by the National Natural Science Foundation of China (Nos. 61390502, 61505033, and 21825103), the Foundation for Innovative Research Groups of the National Natural Science Foundation of China (No. 51521003), the National Postdoctoral Science Foundation of China (Nos. 2017M621254, 2018T110280), the Heilongjiang Provincial Postdoctoral Science Foundation (LBH-TZ1708), the Self-Planned Task (SKLRS201607B) of State Key Laboratory of Robotics and System (HIT), and Key Laboratory of Micro-systems and Micro-structures Manufacturing of Ministry of Education, Harbin Institute of Technology (2017KM003).
Publisher Copyright:
© 2019 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
PY - 2020/2/1
Y1 - 2020/2/1
N2 - Miniaturization of device elements, such as ferroelectric diodes, depends on the downscaling of ferroelectric film, which is also crucial for developing high-density information storage technologies of ferroelectric random access memories (FeRAMs). Recently emerged ferroelectric two-dimensional (2D) van der Waals (vdWs) layered materials bring an additional opportunity to further increase the density of FeRAMs. A lateral, switchable rectifier is designed and fabricated based on atomically thin 2D α-In2Se3 ferroelectric diodes, thus breaking the thickness limitation of conventional ferroelectric films and achieving an unprecedented level of miniaturization. This is realized through the interrelated coupling between out-of-plane and in-plane dipoles at room temperature; that is, horizontal polarization reversal can be effectively controlled through a vertical electric field. Being further explored as a switchable rectifier, the obtained maximum value of rectification ratio for the α-In2Se3 based ferroelectric diode can reach up to 2.5 × 103. These results indicate that 2D ferroelectric semiconductors can offer a pathway to develop next-generation multifunctional electronics.
AB - Miniaturization of device elements, such as ferroelectric diodes, depends on the downscaling of ferroelectric film, which is also crucial for developing high-density information storage technologies of ferroelectric random access memories (FeRAMs). Recently emerged ferroelectric two-dimensional (2D) van der Waals (vdWs) layered materials bring an additional opportunity to further increase the density of FeRAMs. A lateral, switchable rectifier is designed and fabricated based on atomically thin 2D α-In2Se3 ferroelectric diodes, thus breaking the thickness limitation of conventional ferroelectric films and achieving an unprecedented level of miniaturization. This is realized through the interrelated coupling between out-of-plane and in-plane dipoles at room temperature; that is, horizontal polarization reversal can be effectively controlled through a vertical electric field. Being further explored as a switchable rectifier, the obtained maximum value of rectification ratio for the α-In2Se3 based ferroelectric diode can reach up to 2.5 × 103. These results indicate that 2D ferroelectric semiconductors can offer a pathway to develop next-generation multifunctional electronics.
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U2 - 10.1002/aelm.201900975
DO - 10.1002/aelm.201900975
M3 - Article
AN - SCOPUS:85075539596
VL - 6
JO - Advanced Electronic Materials
JF - Advanced Electronic Materials
SN - 2199-160X
IS - 2
M1 - 1900975
ER -