Intrinsic Dipole Coupling in 2D van der Waals Ferroelectrics for Gate-Controlled Switchable Rectifier

Mingjin Dai, Kai Li, Fakun Wang, Yunxia Hu, Jia Zhang, Tianyou Zhai, Bin Yang, Yongqing Fu, Wenwu Cao, Dechang Jia, Yu Zhou, Ping An Hu

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Abstract

Miniaturization of device elements, such as ferroelectric diodes, depends on the downscaling of ferroelectric film, which is also crucial for developing high-density information storage technologies of ferroelectric random access memories (FeRAMs). Recently emerged ferroelectric two-dimensional (2D) van der Waals (vdWs) layered materials bring an additional opportunity to further increase the density of FeRAMs. A lateral, switchable rectifier is designed and fabricated based on atomically thin 2D α-In2Se3 ferroelectric diodes, thus breaking the thickness limitation of conventional ferroelectric films and achieving an unprecedented level of miniaturization. This is realized through the interrelated coupling between out-of-plane and in-plane dipoles at room temperature; that is, horizontal polarization reversal can be effectively controlled through a vertical electric field. Being further explored as a switchable rectifier, the obtained maximum value of rectification ratio for the α-In2Se3 based ferroelectric diode can reach up to 2.5 × 103. These results indicate that 2D ferroelectric semiconductors can offer a pathway to develop next-generation multifunctional electronics.

Original languageEnglish (US)
Article number1900975
JournalAdvanced Electronic Materials
Volume6
Issue number2
DOIs
StatePublished - Feb 1 2020

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All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials

Cite this

Dai, M., Li, K., Wang, F., Hu, Y., Zhang, J., Zhai, T., Yang, B., Fu, Y., Cao, W., Jia, D., Zhou, Y., & Hu, P. A. (2020). Intrinsic Dipole Coupling in 2D van der Waals Ferroelectrics for Gate-Controlled Switchable Rectifier. Advanced Electronic Materials, 6(2), [1900975]. https://doi.org/10.1002/aelm.201900975