Intrinsic electronic switching time in ultrathin epitaxial vanadium dioxide thin film

Ayan Kar, Nikhil Shukla, Eugene Freeman, Hanjong Paik, Huichu Liu, Roman Engel-Herbert, S. S.N. Bhardwaja, Darrell G. Schlom, Suman Datta

Research output: Contribution to journalArticlepeer-review

30 Scopus citations

Abstract

This letter investigates the intrinsic electronic switching time associated with the insulator-to-metal phase transition in epitaxial single crystal vanadium dioxide (VO2) thin films using impedance spectroscopy and ac conductivity measurements. The existence of insulating and metallic phase coexistence, intrinsic to the epitaxial (001) oriented VO2 thin film grown on a (001) rutile TiO2 substrate, results in a finite capacitance being associated with the VO2 films in their insulating phase that limits the electronic switching speed. Insights into the switching characteristics and their correlation to the transport mechanism in the light of phase coexistence are obtained by performing a detailed scaling study on VO2 two-terminal devices.

Original languageEnglish (US)
Article number072106
JournalApplied Physics Letters
Volume102
Issue number7
DOIs
StatePublished - Feb 18 2013

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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