Intrinsic mobility limits of a two-dimensional electron gas in AlGaN/GaN heterostructures

W. Walukiewicz, L. Hsu, Joan Marie Redwing

Research output: Contribution to journalConference article

2 Citations (Scopus)

Abstract

We present the results of a theoretical study of the 2D electron gas mobility at a AlxGa1-x N/GaN heterointerface. All standard mechanisms, including scattering by acoustic and optical phonons, and remote and background (residual) impurities have been included in our calculation of theoretical mobility limits in a AlxGa1-xN/GaN structure. Comparison of calculations with experimental mobilities obtained from high quality MOCVD grown Al0.15Ga0.85N/GaN heterostructures shows that the low temperature mobility in these samples is dominated by scattering from ionized impurities, with a smaller contribution from acoustic phonons.

Original languageEnglish (US)
Pages (from-to)573-578
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume449
StatePublished - Jan 1 1997

Fingerprint

Two dimensional electron gas
Phonons
electron gas
Heterojunctions
Acoustics
Scattering
Impurities
Electron gas
Metallorganic chemical vapor deposition
phonons
impurities
acoustics
scattering
metalorganic chemical vapor deposition
Temperature
aluminum gallium nitride

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

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abstract = "We present the results of a theoretical study of the 2D electron gas mobility at a AlxGa1-x N/GaN heterointerface. All standard mechanisms, including scattering by acoustic and optical phonons, and remote and background (residual) impurities have been included in our calculation of theoretical mobility limits in a AlxGa1-xN/GaN structure. Comparison of calculations with experimental mobilities obtained from high quality MOCVD grown Al0.15Ga0.85N/GaN heterostructures shows that the low temperature mobility in these samples is dominated by scattering from ionized impurities, with a smaller contribution from acoustic phonons.",
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Intrinsic mobility limits of a two-dimensional electron gas in AlGaN/GaN heterostructures. / Walukiewicz, W.; Hsu, L.; Redwing, Joan Marie.

In: Materials Research Society Symposium - Proceedings, Vol. 449, 01.01.1997, p. 573-578.

Research output: Contribution to journalConference article

TY - JOUR

T1 - Intrinsic mobility limits of a two-dimensional electron gas in AlGaN/GaN heterostructures

AU - Walukiewicz, W.

AU - Hsu, L.

AU - Redwing, Joan Marie

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N2 - We present the results of a theoretical study of the 2D electron gas mobility at a AlxGa1-x N/GaN heterointerface. All standard mechanisms, including scattering by acoustic and optical phonons, and remote and background (residual) impurities have been included in our calculation of theoretical mobility limits in a AlxGa1-xN/GaN structure. Comparison of calculations with experimental mobilities obtained from high quality MOCVD grown Al0.15Ga0.85N/GaN heterostructures shows that the low temperature mobility in these samples is dominated by scattering from ionized impurities, with a smaller contribution from acoustic phonons.

AB - We present the results of a theoretical study of the 2D electron gas mobility at a AlxGa1-x N/GaN heterointerface. All standard mechanisms, including scattering by acoustic and optical phonons, and remote and background (residual) impurities have been included in our calculation of theoretical mobility limits in a AlxGa1-xN/GaN structure. Comparison of calculations with experimental mobilities obtained from high quality MOCVD grown Al0.15Ga0.85N/GaN heterostructures shows that the low temperature mobility in these samples is dominated by scattering from ionized impurities, with a smaller contribution from acoustic phonons.

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