The growth of A1N on sapphire substrates was studied and compared to results obtained on Si to better understand the observed stress evolution. The films were characterized by x-ray diffraction and atomic force microscopy (AFM) to correlate the change in film structure with the measured variation in growth stress and study the effect of temperature and choice of substrate. The results were analyzed within the framework of the island coalescence model. The clear evidence for the presence of grain coalescence stresses in the systems were also presented.
All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)