Intrinsic stresses in AlN layers grown by metal organic chemical vapor deposition on (0001) sapphire and (111) Sl substrates

Srinivasan Raghavan, Joan M. Redwing

Research output: Contribution to journalArticle

68 Scopus citations

Abstract

The growth of A1N on sapphire substrates was studied and compared to results obtained on Si to better understand the observed stress evolution. The films were characterized by x-ray diffraction and atomic force microscopy (AFM) to correlate the change in film structure with the measured variation in growth stress and study the effect of temperature and choice of substrate. The results were analyzed within the framework of the island coalescence model. The clear evidence for the presence of grain coalescence stresses in the systems were also presented.

Original languageEnglish (US)
Pages (from-to)2995-3003
Number of pages9
JournalJournal of Applied Physics
Volume96
Issue number5
DOIs
StatePublished - Sep 1 2004

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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