Intrinsic topological insulator Bi 2 Te 3 thin films on si and their thickness limit

Yao Yi Li, Guang Wang, Xie Gang Zhu, Min Hao Liu, Cun Ye, Xi Chen, Ya Yu Wang, Ke He, Li Li Wang, Xu Cun Ma, Hai Jun Zhang, Xi Dai, Zhong Fang, Xin Cheng Xie, Ying Liu, Xiao Liang Qi, Jin Feng Jia, Shou Cheng Zhang, Qi Kun Xue

Research output: Contribution to journalArticlepeer-review

306 Scopus citations

Abstract

High-quality Bi2Te3 films can be grown on Si by the state-of-art molecular beam epitaxy technique. In situ angle-resolved photo-emission spectroscopy measurement reveals that the as-grown films are intrinsic topological insulators and the single-Dirac-cone surface state develops at a thickness of two quintuple layers. The work opens a new avenue for engineering of topological materials based on well-developed Si technology.

Original languageEnglish (US)
Pages (from-to)4002-4007
Number of pages6
JournalAdvanced Materials
Volume22
Issue number36
DOIs
StatePublished - Sep 22 2010

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering

Fingerprint Dive into the research topics of 'Intrinsic topological insulator Bi 2 Te 3 thin films on si and their thickness limit'. Together they form a unique fingerprint.

Cite this