Investigation into the early stages of oxide growth on gallium nitride

S. D. Wolter, J. M. Delucca, S. E. Mohney, R. S. Kern, C. P. Kuo

Research output: Contribution to journalArticlepeer-review

80 Scopus citations

Abstract

The early stages of thermal oxidation of gallium nitride epilayers in dry O2 have been studied using surface sensitive analytical techniques and transmission electron microscopy. Deconvolution of the Ga 3d core level spectra from X-ray photoelectron spectroscopy revealed peak positions representing gallium nitride, gallium oxide, and an intermediate phase. Transmission electron microscopy revealed an overlayer approximately 1.5-3.0 nm thick with registry to the (0001) GaN after dry oxidation at 800 °C for 1 h. Based on the data from X-ray photoelectron spectroscopy, this layer is believed to be a Ga(x+2)N3xO(3-3x) compound. Atomic force microscopy and transmission electron microscopy revealed the formation of discrete oxide crystallites on top of the oxynitride layer. The crystallites become more numerous and grow with continued oxidation.

Original languageEnglish (US)
Pages (from-to)153-160
Number of pages8
JournalThin Solid Films
Volume371
Issue number1
DOIs
StatePublished - Aug 1 2000

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

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