Investigation of As-doped ZnO films synthesized via thermal annealing of ZnSe/GaAs heterostructures

O. Maksimov, B. Z. Liu

Research output: Contribution to journalArticle

4 Scopus citations

Abstract

We synthesized ZnO films via oxidative annealing of ZnSe/GaAs heterostructures and investigated their structural and optical properties. Films were polycrystalline, c-axis oriented and exhibited superior optical properties. In addition, we detected nanometer-size As clusters into the ZnO film and a GaxOy layer at the ZnO/GaAs interface. Formation of an interfacial layer can prevent use of this technique for p-type doping and complicates identification of the origin of p-type response in the annealed ZnO/GaAs heterostructures.

Original languageEnglish (US)
Pages (from-to)3149-3153
Number of pages5
JournalJournal of Crystal Growth
Volume310
Issue number13
DOIs
StatePublished - Jun 15 2008

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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