TY - JOUR
T1 - Investigation of As-doped ZnO films synthesized via thermal annealing of ZnSe/GaAs heterostructures
AU - Maksimov, O.
AU - Liu, B. Z.
N1 - Funding Information:
This work was partially supported by the Department of the Navy, Office of Naval Research under Grant N00014-07-1-0460. Any opinions, findings and conclusions or recommendations expressed in this material are those of the authors and do not necessarily reflect the views of the Office of Naval Research.
Copyright:
Copyright 2008 Elsevier B.V., All rights reserved.
PY - 2008/6/15
Y1 - 2008/6/15
N2 - We synthesized ZnO films via oxidative annealing of ZnSe/GaAs heterostructures and investigated their structural and optical properties. Films were polycrystalline, c-axis oriented and exhibited superior optical properties. In addition, we detected nanometer-size As clusters into the ZnO film and a GaxOy layer at the ZnO/GaAs interface. Formation of an interfacial layer can prevent use of this technique for p-type doping and complicates identification of the origin of p-type response in the annealed ZnO/GaAs heterostructures.
AB - We synthesized ZnO films via oxidative annealing of ZnSe/GaAs heterostructures and investigated their structural and optical properties. Films were polycrystalline, c-axis oriented and exhibited superior optical properties. In addition, we detected nanometer-size As clusters into the ZnO film and a GaxOy layer at the ZnO/GaAs interface. Formation of an interfacial layer can prevent use of this technique for p-type doping and complicates identification of the origin of p-type response in the annealed ZnO/GaAs heterostructures.
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U2 - 10.1016/j.jcrysgro.2008.03.027
DO - 10.1016/j.jcrysgro.2008.03.027
M3 - Article
AN - SCOPUS:44549088053
VL - 310
SP - 3149
EP - 3153
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
SN - 0022-0248
IS - 13
ER -