Investigation of As-doped ZnO films synthesized via thermal annealing of ZnSe/GaAs heterostructures

O. Maksimov; B. Z. Liu

doi:10.1016/j.jcrysgro.2008.03.027

Investigation of As-doped ZnO films synthesized via thermal annealing of ZnSe/GaAs heterostructures

O. Maksimov, B. Z. Liu

Nanofabrication Laboratory

Research output: Contribution to journal › Article

4 Scopus citations

Abstract

We synthesized ZnO films via oxidative annealing of ZnSe/GaAs heterostructures and investigated their structural and optical properties. Films were polycrystalline, c-axis oriented and exhibited superior optical properties. In addition, we detected nanometer-size As clusters into the ZnO film and a Ga_xO_y layer at the ZnO/GaAs interface. Formation of an interfacial layer can prevent use of this technique for p-type doping and complicates identification of the origin of p-type response in the annealed ZnO/GaAs heterostructures.

Original language	English (US)
Pages (from-to)	3149-3153
Number of pages	5
Journal	Journal of Crystal Growth
Volume	310
Issue number	13
DOIs	https://doi.org/10.1016/j.jcrysgro.2008.03.027
State	Published - Jun 15 2008

All Science Journal Classification (ASJC) codes

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

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Maksimov, O., & Liu, B. Z. (2008). Investigation of As-doped ZnO films synthesized via thermal annealing of ZnSe/GaAs heterostructures. Journal of Crystal Growth, 310(13), 3149-3153. https://doi.org/10.1016/j.jcrysgro.2008.03.027

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