Investigation of InxGa1-xAs FinFET architecture with varying indium (x) concentration and quantum confinement

Vt Arun, Nidhi Agrawal, Guy Lavallee, Mirco Cantoro, Sang Su Kim, Dong Won Kim, Suman Datta

Research output: Chapter in Book/Report/Conference proceedingConference contribution

5 Scopus citations

Abstract

InxGa1-xAs FinFETs with varying indium percentage, x, and vertical body thicknesses, are fabricated in a closely packed fin configuration (10 fins per micron of layout area) and their relative performance analyzed and benchmarked. In0.7Ga0.3As quantum well FinFET (QWFF) exhibits peak field effect mobility of 3,000 cm2/V-sec at a fin width of 38nm with highest performance. Short channel In0.7Ga0.3As QWFF (Lg=120nm) exhibits IDSAT of 1.16mA/μm at VG-VT=1V and extrinsic peak gm=1.9mS/μm at VDS=0.5V and IOFF=30 nA/μm. Components of external resistance (RExt), side wall DIT, fin profile are analyzed to investigate feasibility of InxGa1-xAs FinFET for beyond 10nm technology node.

Original languageEnglish (US)
Title of host publicationDigest of Technical Papers - Symposium on VLSI Technology
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781479933310
DOIs
StatePublished - Sep 8 2014
Event34th Symposium on VLSI Technology, VLSIT 2014 - Honolulu, United States
Duration: Jun 9 2014Jun 12 2014

Publication series

NameDigest of Technical Papers - Symposium on VLSI Technology
ISSN (Print)0743-1562

Other

Other34th Symposium on VLSI Technology, VLSIT 2014
CountryUnited States
CityHonolulu
Period6/9/146/12/14

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

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  • Cite this

    Arun, V., Agrawal, N., Lavallee, G., Cantoro, M., Kim, S. S., Kim, D. W., & Datta, S. (2014). Investigation of InxGa1-xAs FinFET architecture with varying indium (x) concentration and quantum confinement. In Digest of Technical Papers - Symposium on VLSI Technology [6894372] (Digest of Technical Papers - Symposium on VLSI Technology). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/VLSIT.2014.6894372