Investigation of magnetic field attacks on commercial Magneto-Resistive Random Access Memory

Alexander Holst, Jae Won Jang, Swaroop Ghosh

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    3 Scopus citations

    Abstract

    In this work, we use a Field-Programmable Gate Array (FPGA) based memory testing setup to study the susceptibility of Magneto-Resistive Random Access Memory (MRAM) to interference by externally applied magnetic fields. We use a rare earth magnet field source to compare the transient and residual bit error response due to increasing magnetic field strengths and orientation during memory read, write and retention. Results indicate that the transient and residual error response in MRAM is proportional to applied field strength. Furthermore, MRAM displays resistance to disturbance during read interference and is more susceptible to destructive error during write-cycle magnetic interference.

    Original languageEnglish (US)
    Title of host publicationProceedings of the 18th International Symposium on Quality Electronic Design, ISQED 2017
    PublisherIEEE Computer Society
    Pages155-160
    Number of pages6
    ISBN (Electronic)9781509054046
    DOIs
    StatePublished - May 2 2017
    Event18th International Symposium on Quality Electronic Design, ISQED 2017 - Santa Clara, United States
    Duration: Mar 14 2017Mar 15 2017

    Publication series

    NameProceedings - International Symposium on Quality Electronic Design, ISQED
    ISSN (Print)1948-3287
    ISSN (Electronic)1948-3295

    Other

    Other18th International Symposium on Quality Electronic Design, ISQED 2017
    CountryUnited States
    CitySanta Clara
    Period3/14/173/15/17

    All Science Journal Classification (ASJC) codes

    • Hardware and Architecture
    • Electrical and Electronic Engineering
    • Safety, Risk, Reliability and Quality

    Fingerprint Dive into the research topics of 'Investigation of magnetic field attacks on commercial Magneto-Resistive Random Access Memory'. Together they form a unique fingerprint.

  • Cite this

    Holst, A., Jang, J. W., & Ghosh, S. (2017). Investigation of magnetic field attacks on commercial Magneto-Resistive Random Access Memory. In Proceedings of the 18th International Symposium on Quality Electronic Design, ISQED 2017 (pp. 155-160). [7918309] (Proceedings - International Symposium on Quality Electronic Design, ISQED). IEEE Computer Society. https://doi.org/10.1109/ISQED.2017.7918309