Investigation of magnetic field attacks on commercial Magneto-Resistive Random Access Memory

Alexander Holst, Jae Won Jang, Swaroop Ghosh

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    2 Citations (Scopus)

    Abstract

    In this work, we use a Field-Programmable Gate Array (FPGA) based memory testing setup to study the susceptibility of Magneto-Resistive Random Access Memory (MRAM) to interference by externally applied magnetic fields. We use a rare earth magnet field source to compare the transient and residual bit error response due to increasing magnetic field strengths and orientation during memory read, write and retention. Results indicate that the transient and residual error response in MRAM is proportional to applied field strength. Furthermore, MRAM displays resistance to disturbance during read interference and is more susceptible to destructive error during write-cycle magnetic interference.

    Original languageEnglish (US)
    Title of host publicationProceedings of the 18th International Symposium on Quality Electronic Design, ISQED 2017
    PublisherIEEE Computer Society
    Pages155-160
    Number of pages6
    ISBN (Electronic)9781509054046
    DOIs
    StatePublished - May 2 2017
    Event18th International Symposium on Quality Electronic Design, ISQED 2017 - Santa Clara, United States
    Duration: Mar 14 2017Mar 15 2017

    Publication series

    NameProceedings - International Symposium on Quality Electronic Design, ISQED
    ISSN (Print)1948-3287
    ISSN (Electronic)1948-3295

    Other

    Other18th International Symposium on Quality Electronic Design, ISQED 2017
    CountryUnited States
    CitySanta Clara
    Period3/14/173/15/17

    Fingerprint

    MRAM devices
    Magnetic fields
    Data storage equipment
    Rare earths
    Magnets
    Field programmable gate arrays (FPGA)
    Display devices
    Testing

    All Science Journal Classification (ASJC) codes

    • Hardware and Architecture
    • Electrical and Electronic Engineering
    • Safety, Risk, Reliability and Quality

    Cite this

    Holst, A., Jang, J. W., & Ghosh, S. (2017). Investigation of magnetic field attacks on commercial Magneto-Resistive Random Access Memory. In Proceedings of the 18th International Symposium on Quality Electronic Design, ISQED 2017 (pp. 155-160). [7918309] (Proceedings - International Symposium on Quality Electronic Design, ISQED). IEEE Computer Society. https://doi.org/10.1109/ISQED.2017.7918309
    Holst, Alexander ; Jang, Jae Won ; Ghosh, Swaroop. / Investigation of magnetic field attacks on commercial Magneto-Resistive Random Access Memory. Proceedings of the 18th International Symposium on Quality Electronic Design, ISQED 2017. IEEE Computer Society, 2017. pp. 155-160 (Proceedings - International Symposium on Quality Electronic Design, ISQED).
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    title = "Investigation of magnetic field attacks on commercial Magneto-Resistive Random Access Memory",
    abstract = "In this work, we use a Field-Programmable Gate Array (FPGA) based memory testing setup to study the susceptibility of Magneto-Resistive Random Access Memory (MRAM) to interference by externally applied magnetic fields. We use a rare earth magnet field source to compare the transient and residual bit error response due to increasing magnetic field strengths and orientation during memory read, write and retention. Results indicate that the transient and residual error response in MRAM is proportional to applied field strength. Furthermore, MRAM displays resistance to disturbance during read interference and is more susceptible to destructive error during write-cycle magnetic interference.",
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    Holst, A, Jang, JW & Ghosh, S 2017, Investigation of magnetic field attacks on commercial Magneto-Resistive Random Access Memory. in Proceedings of the 18th International Symposium on Quality Electronic Design, ISQED 2017., 7918309, Proceedings - International Symposium on Quality Electronic Design, ISQED, IEEE Computer Society, pp. 155-160, 18th International Symposium on Quality Electronic Design, ISQED 2017, Santa Clara, United States, 3/14/17. https://doi.org/10.1109/ISQED.2017.7918309

    Investigation of magnetic field attacks on commercial Magneto-Resistive Random Access Memory. / Holst, Alexander; Jang, Jae Won; Ghosh, Swaroop.

    Proceedings of the 18th International Symposium on Quality Electronic Design, ISQED 2017. IEEE Computer Society, 2017. p. 155-160 7918309 (Proceedings - International Symposium on Quality Electronic Design, ISQED).

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

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    AB - In this work, we use a Field-Programmable Gate Array (FPGA) based memory testing setup to study the susceptibility of Magneto-Resistive Random Access Memory (MRAM) to interference by externally applied magnetic fields. We use a rare earth magnet field source to compare the transient and residual bit error response due to increasing magnetic field strengths and orientation during memory read, write and retention. Results indicate that the transient and residual error response in MRAM is proportional to applied field strength. Furthermore, MRAM displays resistance to disturbance during read interference and is more susceptible to destructive error during write-cycle magnetic interference.

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    Holst A, Jang JW, Ghosh S. Investigation of magnetic field attacks on commercial Magneto-Resistive Random Access Memory. In Proceedings of the 18th International Symposium on Quality Electronic Design, ISQED 2017. IEEE Computer Society. 2017. p. 155-160. 7918309. (Proceedings - International Symposium on Quality Electronic Design, ISQED). https://doi.org/10.1109/ISQED.2017.7918309