Investigation of SILC via energy resolved spin dependent tunneling spectroscopy

J. T. Ryan, Patrick M. Lenahan, A. T. Krishnan, S. Krishnan

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Abstract

We demonstrate voltage controlled spin dependent tunneling in 1.2nm effective oxide thickness silicon oxynitride films. Our observations introduce a simple method to link point defect structure and energy levels in a very direct way in materials of great technological importance. We obtain defect energy level resolution by exploiting the enormous difference between the capacitance of the very thin dielectric and the capacitance of the depletion layer of moderately doped silicon. The simplicity of the technique and the robust character of the response make it, at least potentially, of widespread utility in the understanding of defects important in solid state electronics. Since the specific defect observed is generated by high electric field stressing, an important device instability in present day integrated circuitry, the observations are of considerable importance for present day technology.

Original languageEnglish (US)
Title of host publication2009 IEEE International Integrated Reliability Workshop Final Report, IIRW 2009
Pages1-4
Number of pages4
DOIs
StatePublished - Dec 1 2009
Event2009 IEEE International Integrated Reliability Workshop, IIRW 2009 - South Lake Tahoe, CA, United States
Duration: Oct 18 2009Oct 22 2009

Other

Other2009 IEEE International Integrated Reliability Workshop, IIRW 2009
CountryUnited States
CitySouth Lake Tahoe, CA
Period10/18/0910/22/09

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Safety, Risk, Reliability and Quality
  • Electronic, Optical and Magnetic Materials

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