Abstract
We demonstrate voltage controlled spin dependent tunneling in 1.2nm effective oxide thickness silicon oxynitride films. Our observations introduce a simple method to link point defect structure and energy levels in a very direct way in materials of great technological importance. We obtain defect energy level resolution by exploiting the enormous difference between the capacitance of the very thin dielectric and the capacitance of the depletion layer of moderately doped silicon. The simplicity of the technique and the robust character of the response make it, at least potentially, of widespread utility in the understanding of defects important in solid state electronics. Since the specific defect observed is generated by high electric field stressing, an important device instability in present day integrated circuitry, the observations are of considerable importance for present day technology.
Original language | English (US) |
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Title of host publication | 2009 IEEE International Integrated Reliability Workshop Final Report, IIRW 2009 |
Pages | 1-4 |
Number of pages | 4 |
DOIs | |
State | Published - Dec 1 2009 |
Event | 2009 IEEE International Integrated Reliability Workshop, IIRW 2009 - South Lake Tahoe, CA, United States Duration: Oct 18 2009 → Oct 22 2009 |
Other
Other | 2009 IEEE International Integrated Reliability Workshop, IIRW 2009 |
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Country/Territory | United States |
City | South Lake Tahoe, CA |
Period | 10/18/09 → 10/22/09 |
All Science Journal Classification (ASJC) codes
- Electrical and Electronic Engineering
- Safety, Risk, Reliability and Quality
- Electronic, Optical and Magnetic Materials