Investigation of sputtered indium-tin oxide/silicon interfaces: Ion damage, hydrogen passivation and low-temperature anneal

K. Kuwano, S. Ashok

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8 Scopus citations

Abstract

Sputtered indium tin oxide (ITO)/Si contacts reveal a reduced interfacial barrier on n-Si and an increase on p-Si as expected from ion damage. Deep level transient spectroscopy (DLTS) identifies three electron traps (0.10, 0.19 and 0.25 eV) in n-Si and a single hole trap at 0.20 eV in p-Si with concentrations ≈ 2-5 × 10 12 cm -3 . Pre-hydrogenation of wafers in a plasma greatly reduces the DLTS signal, offering first evidence of in-situ passivation of sputter damage by atomic hydrogen. Low-temperature anneal (180°C, 12-24 h) of the ITO sputter damage and influence of illumination during anneal appear to favor possible defect anneal by recombination-assisted processes.

Original languageEnglish (US)
Pages (from-to)629-633
Number of pages5
JournalApplied Surface Science
Volume117-118
DOIs
StatePublished - Jun 2 1997

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Condensed Matter Physics
  • Physics and Astronomy(all)
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

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