Investigation of sputtered indium-tin oxide/silicon interfaces: Ion damage, hydrogen passivation and low-temperature anneal

K. Kuwano, S Ashok

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

Sputtered indium tin oxide (ITO)/Si contacts reveal a reduced interfacial barrier on n-Si and an increase on p-Si as expected from ion damage. Deep level transient spectroscopy (DLTS) identifies three electron traps (0.10, 0.19 and 0.25 eV) in n-Si and a single hole trap at 0.20 eV in p-Si with concentrations ≈ 2-5 × 10 12 cm -3 . Pre-hydrogenation of wafers in a plasma greatly reduces the DLTS signal, offering first evidence of in-situ passivation of sputter damage by atomic hydrogen. Low-temperature anneal (180°C, 12-24 h) of the ITO sputter damage and influence of illumination during anneal appear to favor possible defect anneal by recombination-assisted processes.

Original languageEnglish (US)
Pages (from-to)629-633
Number of pages5
JournalApplied Surface Science
Volume117-118
DOIs
StatePublished - Jun 2 1997

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Deep level transient spectroscopy
Silicon
Tin oxides
Passivation
Indium
Hydrogen
Ions
Hole traps
Electron traps
Hydrogenation
Lighting
Plasmas
Temperature
Defects
indium tin oxide

All Science Journal Classification (ASJC) codes

  • Surfaces, Coatings and Films

Cite this

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abstract = "Sputtered indium tin oxide (ITO)/Si contacts reveal a reduced interfacial barrier on n-Si and an increase on p-Si as expected from ion damage. Deep level transient spectroscopy (DLTS) identifies three electron traps (0.10, 0.19 and 0.25 eV) in n-Si and a single hole trap at 0.20 eV in p-Si with concentrations ≈ 2-5 × 10 12 cm -3 . Pre-hydrogenation of wafers in a plasma greatly reduces the DLTS signal, offering first evidence of in-situ passivation of sputter damage by atomic hydrogen. Low-temperature anneal (180°C, 12-24 h) of the ITO sputter damage and influence of illumination during anneal appear to favor possible defect anneal by recombination-assisted processes.",
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Investigation of sputtered indium-tin oxide/silicon interfaces : Ion damage, hydrogen passivation and low-temperature anneal. / Kuwano, K.; Ashok, S.

In: Applied Surface Science, Vol. 117-118, 02.06.1997, p. 629-633.

Research output: Contribution to journalArticle

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T2 - Ion damage, hydrogen passivation and low-temperature anneal

AU - Kuwano, K.

AU - Ashok, S

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