INVESTIGATION OF STRESS EFFECTS ON THE DC CHARACTERISTICS OF GAAS MESFET'S THROUGH THE USE OF EXTERNALLY APPLIED LOADS.

Patrick J. McNally, Jean Claude Ramirez, L. S. Cooper, James J. Rosenberg, L. B. Freund, Thomas Nelson Jackson

Research output: Contribution to journalArticle

Abstract

The authors assess the impact of process induced stresses on the fabrication and performance of GaAs MESFETs. Stress was introduced into the devices directly by bonding chips to mechanical test specimens, thus avoiding any additional thermal or plasma processing in the determination of the mechanical effects, and allowing the study of individual devices in both tension and compression. Threshold shifts were measured on 1- mu m self-aligned refractory gate MESFETs (having no direction overlayer) which were stressed in this way. Close agreement was found with the predictions of piezoelectrically induced threshold shift. It was also observed that the threshold voltages of devices oriented with their current flow along several directions behave opposite in sign and very nearly equal in magnitude for tension and compression. In addition to measuring threshold shifts, effects of stress of a wide range of dc parameters were monitored. Nomonotonic yet systematic variations in these other dc parameters suggests the possibility of plastic deformation (i. e. , defection generation) in the device structures even at relatively low bulk stresses ( less than 200 psi), presumably due to the very large stress concentration.

Original languageEnglish (US)
JournalIEEE Transactions on Electron Devices
VolumeED-34
Issue number11
StatePublished - Nov 1987

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field effect transistors
direct current
thresholds
Plasma applications
stress concentration
refractories
Threshold voltage
threshold voltage
Refractory materials
plastic deformation
Stress concentration
Plastic deformation
chips
Fabrication
fabrication
gallium arsenide
predictions
Direction compound

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Physics and Astronomy (miscellaneous)

Cite this

McNally, Patrick J. ; Ramirez, Jean Claude ; Cooper, L. S. ; Rosenberg, James J. ; Freund, L. B. ; Jackson, Thomas Nelson. / INVESTIGATION OF STRESS EFFECTS ON THE DC CHARACTERISTICS OF GAAS MESFET'S THROUGH THE USE OF EXTERNALLY APPLIED LOADS. In: IEEE Transactions on Electron Devices. 1987 ; Vol. ED-34, No. 11.
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INVESTIGATION OF STRESS EFFECTS ON THE DC CHARACTERISTICS OF GAAS MESFET'S THROUGH THE USE OF EXTERNALLY APPLIED LOADS. / McNally, Patrick J.; Ramirez, Jean Claude; Cooper, L. S.; Rosenberg, James J.; Freund, L. B.; Jackson, Thomas Nelson.

In: IEEE Transactions on Electron Devices, Vol. ED-34, No. 11, 11.1987.

Research output: Contribution to journalArticle

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