Investigation of stress effects on the direct current characteristics of GaAs metal-semiconductor field-effect transistors through the use of externally applied loads

Patrick J. McNally, Lisa S. Cooper, James J. Rosenberg, Thomas Nelson Jackson

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

This letter describes an experimental investigation of the effects of mechanical stress on the direct current (dc) electrical parameters in GaAs metal-semiconductor field-effect transistors, with the aim of separating out those effects which are direct manifestations of residual stresses in the completed device (e.g., piezoelectric effects) from stress effects which manifest themselves during the device processing (e.g., stress-enhanced diffusion during implant annealing). This study extends previous work by examining individual transistors under both tensile and compressive loads. Systematic yet nonmonotomic variations in the dc parameters observed in several devices also suggest the possibility of defect generation in the device structures, even at relatively low bulk stresses.

Original languageEnglish (US)
Pages (from-to)1800-1802
Number of pages3
JournalApplied Physics Letters
Volume52
Issue number21
DOIs
StatePublished - Dec 1 1988

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field effect transistors
direct current
metals
residual stress
transistors
annealing
defects

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

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Investigation of stress effects on the direct current characteristics of GaAs metal-semiconductor field-effect transistors through the use of externally applied loads. / McNally, Patrick J.; Cooper, Lisa S.; Rosenberg, James J.; Jackson, Thomas Nelson.

In: Applied Physics Letters, Vol. 52, No. 21, 01.12.1988, p. 1800-1802.

Research output: Contribution to journalArticle

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