Investigation of the abrupt phase transition in 1T-TaS2/MoS2 heterostructures

Benjamin Grisafe, Rui Zhao, Matthew Jerry, Joshua A. Robinson, Suman Datta

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Abstract

Electrically induced phase transitions are being investigated for applications in steep-slope transistors, neuromorphic computing, and coupled oscillator networks. Here, we present an avenue to integrate a layered 2D phase transition material 1T-TaS2 with monolayer MoS2 via direct synthesis. We experimentally demonstrate that the charge density wave (CDW) based phase transition is preserved when grown directly on MoS2, however a 42% reduction in the ON/OFF ratio compared to exfoliated devices is observed. First principles calculations of the 1T-TaS2/MoS2 heterostructure reveal a 39% reduction in the bandgap of 1T-TaS2 compared to the free-standing 1T-TaS2 case.

Original languageEnglish (US)
Title of host publication2018 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2018
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages1-2
Number of pages2
ISBN (Electronic)9781538648254
DOIs
StatePublished - Jul 3 2018
Event2018 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2018 - Hsinchu, Taiwan, Province of China
Duration: Apr 16 2018Apr 19 2018

Publication series

Name2018 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2018

Other

Other2018 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2018
CountryTaiwan, Province of China
CityHsinchu
Period4/16/184/19/18

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Instrumentation
  • Electronic, Optical and Magnetic Materials

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    Grisafe, B., Zhao, R., Jerry, M., Robinson, J. A., & Datta, S. (2018). Investigation of the abrupt phase transition in 1T-TaS2/MoS2 heterostructures. In 2018 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2018 (pp. 1-2). (2018 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2018). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/VLSI-TSA.2018.8403844