Investigation of the detailed structure of atomically sharp Ge/SiO2 interfaces

Tao Liang, W. Windl, S. Lopatin, G. Duscher

Research output: Chapter in Book/Report/Conference proceedingConference contribution

7 Citations (Scopus)

Abstract

The atomic structure of the interface between Ge and SiO2 - fabricated by oxidation of Ge-implanted Si - was studied using a combination of density-functional and kinetic-Monte Carlo simulations with atomic-resolution Z-contrast imaging and electron energy-loss spectroscopy with an experimental resolution close to the quantum-mechanical limit. The combination of experimental and theoretical results is consistent with the model of an atomically abrupt Ge/SiO2 interface with probably small fractions of Ge in the oxide.

Original languageEnglish (US)
Title of host publicationSISPAD 2003 - 2003 IEEE International Conference on Simulation of Semiconductor Processes and Devices
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages143-146
Number of pages4
ISBN (Electronic)0780378261
DOIs
StatePublished - Jan 1 2003
Event2003 IEEE International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2003 - Boston, United States
Duration: Sep 3 2003Sep 5 2003

Publication series

NameInternational Conference on Simulation of Semiconductor Processes and Devices, SISPAD
Volume2003-January

Other

Other2003 IEEE International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2003
CountryUnited States
CityBoston
Period9/3/039/5/03

Fingerprint

Electron energy loss spectroscopy
SiO2
Imaging techniques
Kinetic Monte Carlo
SiGe
Oxidation
Kinetics
Oxides
Density Functional
Spectroscopy
Monte Carlo Simulation
Imaging
Electron
Energy
Monte Carlo simulation
Model

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Computer Science Applications
  • Modeling and Simulation

Cite this

Liang, T., Windl, W., Lopatin, S., & Duscher, G. (2003). Investigation of the detailed structure of atomically sharp Ge/SiO2 interfaces. In SISPAD 2003 - 2003 IEEE International Conference on Simulation of Semiconductor Processes and Devices (pp. 143-146). [1233657] (International Conference on Simulation of Semiconductor Processes and Devices, SISPAD; Vol. 2003-January). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/SISPAD.2003.1233657
Liang, Tao ; Windl, W. ; Lopatin, S. ; Duscher, G. / Investigation of the detailed structure of atomically sharp Ge/SiO2 interfaces. SISPAD 2003 - 2003 IEEE International Conference on Simulation of Semiconductor Processes and Devices. Institute of Electrical and Electronics Engineers Inc., 2003. pp. 143-146 (International Conference on Simulation of Semiconductor Processes and Devices, SISPAD).
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Liang, T, Windl, W, Lopatin, S & Duscher, G 2003, Investigation of the detailed structure of atomically sharp Ge/SiO2 interfaces. in SISPAD 2003 - 2003 IEEE International Conference on Simulation of Semiconductor Processes and Devices., 1233657, International Conference on Simulation of Semiconductor Processes and Devices, SISPAD, vol. 2003-January, Institute of Electrical and Electronics Engineers Inc., pp. 143-146, 2003 IEEE International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2003, Boston, United States, 9/3/03. https://doi.org/10.1109/SISPAD.2003.1233657

Investigation of the detailed structure of atomically sharp Ge/SiO2 interfaces. / Liang, Tao; Windl, W.; Lopatin, S.; Duscher, G.

SISPAD 2003 - 2003 IEEE International Conference on Simulation of Semiconductor Processes and Devices. Institute of Electrical and Electronics Engineers Inc., 2003. p. 143-146 1233657 (International Conference on Simulation of Semiconductor Processes and Devices, SISPAD; Vol. 2003-January).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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AB - The atomic structure of the interface between Ge and SiO2 - fabricated by oxidation of Ge-implanted Si - was studied using a combination of density-functional and kinetic-Monte Carlo simulations with atomic-resolution Z-contrast imaging and electron energy-loss spectroscopy with an experimental resolution close to the quantum-mechanical limit. The combination of experimental and theoretical results is consistent with the model of an atomically abrupt Ge/SiO2 interface with probably small fractions of Ge in the oxide.

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Liang T, Windl W, Lopatin S, Duscher G. Investigation of the detailed structure of atomically sharp Ge/SiO2 interfaces. In SISPAD 2003 - 2003 IEEE International Conference on Simulation of Semiconductor Processes and Devices. Institute of Electrical and Electronics Engineers Inc. 2003. p. 143-146. 1233657. (International Conference on Simulation of Semiconductor Processes and Devices, SISPAD). https://doi.org/10.1109/SISPAD.2003.1233657