Investigation of the detailed structure of atomically sharp Ge/SiO2 interfaces

Tao Liang, W. Windl, S. Lopatin, G. Duscher

Research output: Chapter in Book/Report/Conference proceedingConference contribution

7 Scopus citations

Abstract

The atomic structure of the interface between Ge and SiO2 - fabricated by oxidation of Ge-implanted Si - was studied using a combination of density-functional and kinetic-Monte Carlo simulations with atomic-resolution Z-contrast imaging and electron energy-loss spectroscopy with an experimental resolution close to the quantum-mechanical limit. The combination of experimental and theoretical results is consistent with the model of an atomically abrupt Ge/SiO2 interface with probably small fractions of Ge in the oxide.

Original languageEnglish (US)
Title of host publicationSISPAD 2003 - 2003 IEEE International Conference on Simulation of Semiconductor Processes and Devices
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages143-146
Number of pages4
ISBN (Electronic)0780378261
DOIs
StatePublished - Jan 1 2003
Event2003 IEEE International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2003 - Boston, United States
Duration: Sep 3 2003Sep 5 2003

Publication series

NameInternational Conference on Simulation of Semiconductor Processes and Devices, SISPAD
Volume2003-January

Other

Other2003 IEEE International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2003
CountryUnited States
CityBoston
Period9/3/039/5/03

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Computer Science Applications
  • Modeling and Simulation

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