Investigation of ZnMnTe weakly diluted FCC magnetic semiconductor

P. Kłosowski; T. M. Giebułtowicz; N. Samarth; H. Luo; J. K. Furdyna; J. J. Rhyne

doi:10.1016/0921-4526(92)90677-K

Investigation of ZnMnTe weakly diluted FCC magnetic semiconductor

P. Kłosowski, T. M. Giebułtowicz, N. Samarth, H. Luo, J. K. Furdyna, J. J. Rhyne

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Abstract

We report neutron diffraction studies of Zn_1-xMn_xTe epitaxial layers for x=0.71, 0.84, 0.94 and 1 (pure MnTe). Molecular beam epitaxy (MBE) was used to grow the crystals on a GaAs (100) surface, resulting in zinc blende (ZB) crystallographic structure of the epilayers for all compositions. The film thickness were in the micrometer range, and could be characterized as bulk-like in terms of the strain and magnetic properties. The quality of the crystal was remarkably good, giving an indication that the NiAs form of MnTe grown by conventional techniques may be metastable at room temperature.

Original language	English (US)
Pages (from-to)	114-116
Number of pages	3
Journal	Physica B: Physics of Condensed Matter
Volume	180-181
Issue number	PART 1
DOIs	https://doi.org/10.1016/0921-4526(92)90677-K
State	Published - Jun 2 1992

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering

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title = "Investigation of ZnMnTe weakly diluted FCC magnetic semiconductor",

abstract = "We report neutron diffraction studies of Zn1-xMnxTe epitaxial layers for x=0.71, 0.84, 0.94 and 1 (pure MnTe). Molecular beam epitaxy (MBE) was used to grow the crystals on a GaAs (100) surface, resulting in zinc blende (ZB) crystallographic structure of the epilayers for all compositions. The film thickness were in the micrometer range, and could be characterized as bulk-like in terms of the strain and magnetic properties. The quality of the crystal was remarkably good, giving an indication that the NiAs form of MnTe grown by conventional techniques may be metastable at room temperature.",

author = "P. K{\l}osowski and Giebu{\l}towicz, {T. M.} and N. Samarth and H. Luo and Furdyna, {J. K.} and Rhyne, {J. J.}",

note = "Funding Information: This work was supported by NSF Grant DMR-8821635.",

year = "1992",

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doi = "10.1016/0921-4526(92)90677-K",

language = "English (US)",

volume = "180-181",

pages = "114--116",

journal = "Physica B: Condensed Matter",

issn = "0921-4526",

publisher = "Elsevier",

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TY - JOUR

T1 - Investigation of ZnMnTe weakly diluted FCC magnetic semiconductor

AU - Kłosowski, P.

AU - Giebułtowicz, T. M.

AU - Samarth, N.

AU - Luo, H.

AU - Furdyna, J. K.

AU - Rhyne, J. J.

N1 - Funding Information: This work was supported by NSF Grant DMR-8821635.

PY - 1992/6/2

Y1 - 1992/6/2

N2 - We report neutron diffraction studies of Zn1-xMnxTe epitaxial layers for x=0.71, 0.84, 0.94 and 1 (pure MnTe). Molecular beam epitaxy (MBE) was used to grow the crystals on a GaAs (100) surface, resulting in zinc blende (ZB) crystallographic structure of the epilayers for all compositions. The film thickness were in the micrometer range, and could be characterized as bulk-like in terms of the strain and magnetic properties. The quality of the crystal was remarkably good, giving an indication that the NiAs form of MnTe grown by conventional techniques may be metastable at room temperature.

AB - We report neutron diffraction studies of Zn1-xMnxTe epitaxial layers for x=0.71, 0.84, 0.94 and 1 (pure MnTe). Molecular beam epitaxy (MBE) was used to grow the crystals on a GaAs (100) surface, resulting in zinc blende (ZB) crystallographic structure of the epilayers for all compositions. The film thickness were in the micrometer range, and could be characterized as bulk-like in terms of the strain and magnetic properties. The quality of the crystal was remarkably good, giving an indication that the NiAs form of MnTe grown by conventional techniques may be metastable at room temperature.

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U2 - 10.1016/0921-4526(92)90677-K

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M3 - Article

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VL - 180-181

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EP - 116

JO - Physica B: Condensed Matter

JF - Physica B: Condensed Matter

SN - 0921-4526

IS - PART 1

ER -

Investigation of ZnMnTe weakly diluted FCC magnetic semiconductor

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