We report neutron diffraction studies of Zn1-xMnxTe epitaxial layers for x=0.71, 0.84, 0.94 and 1 (pure MnTe). Molecular beam epitaxy (MBE) was used to grow the crystals on a GaAs (100) surface, resulting in zinc blende (ZB) crystallographic structure of the epilayers for all compositions. The film thickness were in the micrometer range, and could be characterized as bulk-like in terms of the strain and magnetic properties. The quality of the crystal was remarkably good, giving an indication that the NiAs form of MnTe grown by conventional techniques may be metastable at room temperature.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering