TY - JOUR
T1 - Investigation of ZnMnTe weakly diluted FCC magnetic semiconductor
AU - Kłosowski, P.
AU - Giebułtowicz, T. M.
AU - Samarth, N.
AU - Luo, H.
AU - Furdyna, J. K.
AU - Rhyne, J. J.
N1 - Funding Information:
This work was supported by NSF Grant DMR-8821635.
Copyright:
Copyright 2014 Elsevier B.V., All rights reserved.
PY - 1992/6/2
Y1 - 1992/6/2
N2 - We report neutron diffraction studies of Zn1-xMnxTe epitaxial layers for x=0.71, 0.84, 0.94 and 1 (pure MnTe). Molecular beam epitaxy (MBE) was used to grow the crystals on a GaAs (100) surface, resulting in zinc blende (ZB) crystallographic structure of the epilayers for all compositions. The film thickness were in the micrometer range, and could be characterized as bulk-like in terms of the strain and magnetic properties. The quality of the crystal was remarkably good, giving an indication that the NiAs form of MnTe grown by conventional techniques may be metastable at room temperature.
AB - We report neutron diffraction studies of Zn1-xMnxTe epitaxial layers for x=0.71, 0.84, 0.94 and 1 (pure MnTe). Molecular beam epitaxy (MBE) was used to grow the crystals on a GaAs (100) surface, resulting in zinc blende (ZB) crystallographic structure of the epilayers for all compositions. The film thickness were in the micrometer range, and could be characterized as bulk-like in terms of the strain and magnetic properties. The quality of the crystal was remarkably good, giving an indication that the NiAs form of MnTe grown by conventional techniques may be metastable at room temperature.
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U2 - 10.1016/0921-4526(92)90677-K
DO - 10.1016/0921-4526(92)90677-K
M3 - Article
AN - SCOPUS:0027108991
VL - 180-181
SP - 114
EP - 116
JO - Physica B: Condensed Matter
JF - Physica B: Condensed Matter
SN - 0921-4526
IS - PART 1
ER -