Investigations of MgB2/MgO and MgB2/AlN heterostructures for Josephson devices

P. Orgiani, Y. Cui, A. V. Pogrebnyakov, Joan Marie Redwing, V. Vaithyanathan, D. G. Schlom, X. X. Xi

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

We report structural and transport proprieties of MgB2/MgO and MgB2/AlN multilayers for MgB2 Josephson junctions. The MgB2 layers were grown by hybrid physical chemical vapor deposition (HPCVD). The epitaxial MgB2 /MgO /MgB2 trilayers were grown in situ in the HPCVD system. The AlN layers were grown at room temperature by pulsed laser deposition, and the MgB2/AlN/MgB2 trilayers were deposited ex situ with the deposition of the AlN layer between the depositions of the top and bottom MgB2 layers. Although slightly less perfect than in films grown directly on sapphire and SiC substrates, excellent superconducting and transport properties were obtained in the MgB 2 layers in both heterostructures. The result addressed only the first of many issues about the adequacy of using MgO and AlN as the barrier materials for all-MgB2 planar Josephson junctions, i.e. the ability to obtain good structural and superconducting properties in both electrode layers using the trilayer deposition process. It allows us to further investigate the conditions for better wetting and coverage of the insulator layers, as well as other critical issues in the fabrication of all-MgB 2 planar Josephson junctions.

Original languageEnglish (US)
Pages (from-to)228-231
Number of pages4
JournalIEEE Transactions on Applied Superconductivity
Volume15
Issue number2 PART I
DOIs
StatePublished - Jun 1 2005

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Heterojunctions
Physical vapor deposition
Chemical vapor deposition
Josephson junctions
Aluminum Oxide
Pulsed laser deposition
Sapphire
Transport properties
Wetting
Multilayers
Fabrication
vapor deposition
Electrodes
Substrates
adequacy
wetting
pulsed laser deposition
sapphire
transport properties
Temperature

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Cite this

Orgiani, P., Cui, Y., Pogrebnyakov, A. V., Redwing, J. M., Vaithyanathan, V., Schlom, D. G., & Xi, X. X. (2005). Investigations of MgB2/MgO and MgB2/AlN heterostructures for Josephson devices. IEEE Transactions on Applied Superconductivity, 15(2 PART I), 228-231. https://doi.org/10.1109/TASC.2005.849764
Orgiani, P. ; Cui, Y. ; Pogrebnyakov, A. V. ; Redwing, Joan Marie ; Vaithyanathan, V. ; Schlom, D. G. ; Xi, X. X. / Investigations of MgB2/MgO and MgB2/AlN heterostructures for Josephson devices. In: IEEE Transactions on Applied Superconductivity. 2005 ; Vol. 15, No. 2 PART I. pp. 228-231.
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Orgiani, P, Cui, Y, Pogrebnyakov, AV, Redwing, JM, Vaithyanathan, V, Schlom, DG & Xi, XX 2005, 'Investigations of MgB2/MgO and MgB2/AlN heterostructures for Josephson devices', IEEE Transactions on Applied Superconductivity, vol. 15, no. 2 PART I, pp. 228-231. https://doi.org/10.1109/TASC.2005.849764

Investigations of MgB2/MgO and MgB2/AlN heterostructures for Josephson devices. / Orgiani, P.; Cui, Y.; Pogrebnyakov, A. V.; Redwing, Joan Marie; Vaithyanathan, V.; Schlom, D. G.; Xi, X. X.

In: IEEE Transactions on Applied Superconductivity, Vol. 15, No. 2 PART I, 01.06.2005, p. 228-231.

Research output: Contribution to journalArticle

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AU - Orgiani, P.

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AU - Redwing, Joan Marie

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AU - Schlom, D. G.

AU - Xi, X. X.

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N2 - We report structural and transport proprieties of MgB2/MgO and MgB2/AlN multilayers for MgB2 Josephson junctions. The MgB2 layers were grown by hybrid physical chemical vapor deposition (HPCVD). The epitaxial MgB2 /MgO /MgB2 trilayers were grown in situ in the HPCVD system. The AlN layers were grown at room temperature by pulsed laser deposition, and the MgB2/AlN/MgB2 trilayers were deposited ex situ with the deposition of the AlN layer between the depositions of the top and bottom MgB2 layers. Although slightly less perfect than in films grown directly on sapphire and SiC substrates, excellent superconducting and transport properties were obtained in the MgB 2 layers in both heterostructures. The result addressed only the first of many issues about the adequacy of using MgO and AlN as the barrier materials for all-MgB2 planar Josephson junctions, i.e. the ability to obtain good structural and superconducting properties in both electrode layers using the trilayer deposition process. It allows us to further investigate the conditions for better wetting and coverage of the insulator layers, as well as other critical issues in the fabrication of all-MgB 2 planar Josephson junctions.

AB - We report structural and transport proprieties of MgB2/MgO and MgB2/AlN multilayers for MgB2 Josephson junctions. The MgB2 layers were grown by hybrid physical chemical vapor deposition (HPCVD). The epitaxial MgB2 /MgO /MgB2 trilayers were grown in situ in the HPCVD system. The AlN layers were grown at room temperature by pulsed laser deposition, and the MgB2/AlN/MgB2 trilayers were deposited ex situ with the deposition of the AlN layer between the depositions of the top and bottom MgB2 layers. Although slightly less perfect than in films grown directly on sapphire and SiC substrates, excellent superconducting and transport properties were obtained in the MgB 2 layers in both heterostructures. The result addressed only the first of many issues about the adequacy of using MgO and AlN as the barrier materials for all-MgB2 planar Josephson junctions, i.e. the ability to obtain good structural and superconducting properties in both electrode layers using the trilayer deposition process. It allows us to further investigate the conditions for better wetting and coverage of the insulator layers, as well as other critical issues in the fabrication of all-MgB 2 planar Josephson junctions.

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