Ion beam modification of the dielectric properties of thin silicon dioxide films

Chemical Compounds

• Silicon Dioxide 86%
• Ion Beam 77%
• Dielectric Property 71%
• Modification 39%
• Hysteresis 34%
• Liquid Film 34%
• Dielectric Constant 32%
• Ion 27%
• Oxide 19%

Engineering & Materials Science

• Ion beams 100%
• Silica 72%
• Ions 65%
• Silicon wafers 28%
• Metallizing 27%
• Permittivity 23%
• Hysteresis 22%
• Oxides 20%
• Capacitance 20%
• Silicon 18%

Physics & Astronomy

• dielectric properties 58%
• ion beams 54%
• silicon dioxide 53%
• ions 32%
• dosage 31%
• very low frequencies 30%
• silicon 25%
• capacitance 18%
• hysteresis 18%
• wafers 17%
• permittivity 16%
• oxides 14%