Ion beam techniques for low K materials characterization

H. Bakhru, A. Kumar, T. Kaplan, M. Delarosa, Jeffery B. Fortin, G. R. Yang, T. M. Lu, S. Kim, C. Steinbruchel, X. Tang, J. A. Moore, B. Wang, J. McDonald, S. Nitta, V. Pisupatti, al et al

Research output: Contribution to journalConference article

4 Citations (Scopus)

Abstract

Ion beam analysis techniques have become very useful for characterization of low k materials. Studies on several ion beam analysis techniques will be discussed. Rutherford Backscattering Spectrometry (RBS) provides a very powerful analytical technique for the thickness and porosity measurements on porous SiO 2 films. Nuclear Reaction Analysis (NRA) techniques for hydrogen and fluorine profiling are very useful to characterize fluorinated polymer and fluorinated oxide films. Examples of low k materials including SiO 2 :F, Parylene-AF and Teflon-AF will be discussed. Fluorine diffusion in to metals and various interface effects between metal and low k materials will be presented.

Original languageEnglish (US)
Pages (from-to)125-131
Number of pages7
JournalMaterials Research Society Symposium - Proceedings
Volume511
StatePublished - Dec 1 1998
EventProceedings of the 1998 MRS Spring Symposium - San Francisco, CA, USA
Duration: Apr 13 1998Apr 15 1998

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Ion beams
fluorine
Fluorine
ion beams
Fluorocarbon Polymers
teflon (trademark)
Metals
nuclear reactions
metals
oxide films
backscattering
Nuclear reactions
Polytetrafluoroethylene
Rutherford backscattering spectroscopy
porosity
Polytetrafluoroethylenes
Spectrometry
Oxide films
Hydrogen
polymers

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Bakhru, H., Kumar, A., Kaplan, T., Delarosa, M., Fortin, J. B., Yang, G. R., ... et al, A. (1998). Ion beam techniques for low K materials characterization. Materials Research Society Symposium - Proceedings, 511, 125-131.
Bakhru, H. ; Kumar, A. ; Kaplan, T. ; Delarosa, M. ; Fortin, Jeffery B. ; Yang, G. R. ; Lu, T. M. ; Kim, S. ; Steinbruchel, C. ; Tang, X. ; Moore, J. A. ; Wang, B. ; McDonald, J. ; Nitta, S. ; Pisupatti, V. ; et al, al. / Ion beam techniques for low K materials characterization. In: Materials Research Society Symposium - Proceedings. 1998 ; Vol. 511. pp. 125-131.
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abstract = "Ion beam analysis techniques have become very useful for characterization of low k materials. Studies on several ion beam analysis techniques will be discussed. Rutherford Backscattering Spectrometry (RBS) provides a very powerful analytical technique for the thickness and porosity measurements on porous SiO 2 films. Nuclear Reaction Analysis (NRA) techniques for hydrogen and fluorine profiling are very useful to characterize fluorinated polymer and fluorinated oxide films. Examples of low k materials including SiO 2 :F, Parylene-AF and Teflon-AF will be discussed. Fluorine diffusion in to metals and various interface effects between metal and low k materials will be presented.",
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Bakhru, H, Kumar, A, Kaplan, T, Delarosa, M, Fortin, JB, Yang, GR, Lu, TM, Kim, S, Steinbruchel, C, Tang, X, Moore, JA, Wang, B, McDonald, J, Nitta, S, Pisupatti, V & et al, A 1998, 'Ion beam techniques for low K materials characterization', Materials Research Society Symposium - Proceedings, vol. 511, pp. 125-131.

Ion beam techniques for low K materials characterization. / Bakhru, H.; Kumar, A.; Kaplan, T.; Delarosa, M.; Fortin, Jeffery B.; Yang, G. R.; Lu, T. M.; Kim, S.; Steinbruchel, C.; Tang, X.; Moore, J. A.; Wang, B.; McDonald, J.; Nitta, S.; Pisupatti, V.; et al, al.

In: Materials Research Society Symposium - Proceedings, Vol. 511, 01.12.1998, p. 125-131.

Research output: Contribution to journalConference article

TY - JOUR

T1 - Ion beam techniques for low K materials characterization

AU - Bakhru, H.

AU - Kumar, A.

AU - Kaplan, T.

AU - Delarosa, M.

AU - Fortin, Jeffery B.

AU - Yang, G. R.

AU - Lu, T. M.

AU - Kim, S.

AU - Steinbruchel, C.

AU - Tang, X.

AU - Moore, J. A.

AU - Wang, B.

AU - McDonald, J.

AU - Nitta, S.

AU - Pisupatti, V.

AU - et al, al

PY - 1998/12/1

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N2 - Ion beam analysis techniques have become very useful for characterization of low k materials. Studies on several ion beam analysis techniques will be discussed. Rutherford Backscattering Spectrometry (RBS) provides a very powerful analytical technique for the thickness and porosity measurements on porous SiO 2 films. Nuclear Reaction Analysis (NRA) techniques for hydrogen and fluorine profiling are very useful to characterize fluorinated polymer and fluorinated oxide films. Examples of low k materials including SiO 2 :F, Parylene-AF and Teflon-AF will be discussed. Fluorine diffusion in to metals and various interface effects between metal and low k materials will be presented.

AB - Ion beam analysis techniques have become very useful for characterization of low k materials. Studies on several ion beam analysis techniques will be discussed. Rutherford Backscattering Spectrometry (RBS) provides a very powerful analytical technique for the thickness and porosity measurements on porous SiO 2 films. Nuclear Reaction Analysis (NRA) techniques for hydrogen and fluorine profiling are very useful to characterize fluorinated polymer and fluorinated oxide films. Examples of low k materials including SiO 2 :F, Parylene-AF and Teflon-AF will be discussed. Fluorine diffusion in to metals and various interface effects between metal and low k materials will be presented.

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Bakhru H, Kumar A, Kaplan T, Delarosa M, Fortin JB, Yang GR et al. Ion beam techniques for low K materials characterization. Materials Research Society Symposium - Proceedings. 1998 Dec 1;511:125-131.