Ion-Dosage-Dependent Room-Temperature Hysteresis in MOS Structures with Thin Oxides

Arya Raychaudhuri, Sutap Chatterjee, Samares Kar, S Ashok

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

Two sets of metal-oxide-silicon (MOS) structures with oxide thicknesses of 115 and 350 A, respectively, were exposed to 16-keV Si ion beams after dry oxidation. Small-signal capacitance-voltage measurements at room temperature revealed a hysteresis effect in the ion exposed samples, whose magnitude and direction depended upon the ion dosage. No hysteresis could be detected in the control (unimplanted) samples. Mobile charge species in the oxide dominated the hysteresis effect for dosages below 1013/cm2. Around this dosage, electron trapping/detrapping at the Si/Si02 interface began to take place. From the rate of the parallel voltage shifts of the C-V characteristics with respect to time, electron trapping and the mobile oxide charge transfer from the silicon/oxide to the aluminum/oxide interface were found to be faster than electron detrapping and the mobile oxide charge transfer from the oxide/A1 to the Si/Si02 interface. With increasing dosage, the magnitude of the hysteresis came down, and reversed its sign as the dosage approached 1013/cm2. Experimental results suggest immobilization of the mobile oxide charge by lattice disorder induced by the energetic ions, and generation of oxide electron traps in the vicinity of the silicon/oxide interface after the lattice damage turns heavy.

Original languageEnglish (US)
Pages (from-to)316-322
Number of pages7
JournalIEEE Transactions on Electron Devices
Volume38
Issue number2
DOIs
StatePublished - Jan 1 1991

Fingerprint

Silicon oxides
Oxides
Hysteresis
Metals
Ions
Temperature
Electrons
Charge transfer
Electron traps
Capacitance measurement
Aluminum Oxide
Voltage measurement
Ion beams
Oxidation
Aluminum
Electric potential

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

Raychaudhuri, Arya ; Chatterjee, Sutap ; Kar, Samares ; Ashok, S. / Ion-Dosage-Dependent Room-Temperature Hysteresis in MOS Structures with Thin Oxides. In: IEEE Transactions on Electron Devices. 1991 ; Vol. 38, No. 2. pp. 316-322.
@article{07fefb2aaf4e41d0b2ea3407db664d42,
title = "Ion-Dosage-Dependent Room-Temperature Hysteresis in MOS Structures with Thin Oxides",
abstract = "Two sets of metal-oxide-silicon (MOS) structures with oxide thicknesses of 115 and 350 A, respectively, were exposed to 16-keV Si ion beams after dry oxidation. Small-signal capacitance-voltage measurements at room temperature revealed a hysteresis effect in the ion exposed samples, whose magnitude and direction depended upon the ion dosage. No hysteresis could be detected in the control (unimplanted) samples. Mobile charge species in the oxide dominated the hysteresis effect for dosages below 1013/cm2. Around this dosage, electron trapping/detrapping at the Si/Si02 interface began to take place. From the rate of the parallel voltage shifts of the C-V characteristics with respect to time, electron trapping and the mobile oxide charge transfer from the silicon/oxide to the aluminum/oxide interface were found to be faster than electron detrapping and the mobile oxide charge transfer from the oxide/A1 to the Si/Si02 interface. With increasing dosage, the magnitude of the hysteresis came down, and reversed its sign as the dosage approached 1013/cm2. Experimental results suggest immobilization of the mobile oxide charge by lattice disorder induced by the energetic ions, and generation of oxide electron traps in the vicinity of the silicon/oxide interface after the lattice damage turns heavy.",
author = "Arya Raychaudhuri and Sutap Chatterjee and Samares Kar and S Ashok",
year = "1991",
month = "1",
day = "1",
doi = "10.1109/16.69912",
language = "English (US)",
volume = "38",
pages = "316--322",
journal = "IEEE Transactions on Electron Devices",
issn = "0018-9383",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "2",

}

Ion-Dosage-Dependent Room-Temperature Hysteresis in MOS Structures with Thin Oxides. / Raychaudhuri, Arya; Chatterjee, Sutap; Kar, Samares; Ashok, S.

In: IEEE Transactions on Electron Devices, Vol. 38, No. 2, 01.01.1991, p. 316-322.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Ion-Dosage-Dependent Room-Temperature Hysteresis in MOS Structures with Thin Oxides

AU - Raychaudhuri, Arya

AU - Chatterjee, Sutap

AU - Kar, Samares

AU - Ashok, S

PY - 1991/1/1

Y1 - 1991/1/1

N2 - Two sets of metal-oxide-silicon (MOS) structures with oxide thicknesses of 115 and 350 A, respectively, were exposed to 16-keV Si ion beams after dry oxidation. Small-signal capacitance-voltage measurements at room temperature revealed a hysteresis effect in the ion exposed samples, whose magnitude and direction depended upon the ion dosage. No hysteresis could be detected in the control (unimplanted) samples. Mobile charge species in the oxide dominated the hysteresis effect for dosages below 1013/cm2. Around this dosage, electron trapping/detrapping at the Si/Si02 interface began to take place. From the rate of the parallel voltage shifts of the C-V characteristics with respect to time, electron trapping and the mobile oxide charge transfer from the silicon/oxide to the aluminum/oxide interface were found to be faster than electron detrapping and the mobile oxide charge transfer from the oxide/A1 to the Si/Si02 interface. With increasing dosage, the magnitude of the hysteresis came down, and reversed its sign as the dosage approached 1013/cm2. Experimental results suggest immobilization of the mobile oxide charge by lattice disorder induced by the energetic ions, and generation of oxide electron traps in the vicinity of the silicon/oxide interface after the lattice damage turns heavy.

AB - Two sets of metal-oxide-silicon (MOS) structures with oxide thicknesses of 115 and 350 A, respectively, were exposed to 16-keV Si ion beams after dry oxidation. Small-signal capacitance-voltage measurements at room temperature revealed a hysteresis effect in the ion exposed samples, whose magnitude and direction depended upon the ion dosage. No hysteresis could be detected in the control (unimplanted) samples. Mobile charge species in the oxide dominated the hysteresis effect for dosages below 1013/cm2. Around this dosage, electron trapping/detrapping at the Si/Si02 interface began to take place. From the rate of the parallel voltage shifts of the C-V characteristics with respect to time, electron trapping and the mobile oxide charge transfer from the silicon/oxide to the aluminum/oxide interface were found to be faster than electron detrapping and the mobile oxide charge transfer from the oxide/A1 to the Si/Si02 interface. With increasing dosage, the magnitude of the hysteresis came down, and reversed its sign as the dosage approached 1013/cm2. Experimental results suggest immobilization of the mobile oxide charge by lattice disorder induced by the energetic ions, and generation of oxide electron traps in the vicinity of the silicon/oxide interface after the lattice damage turns heavy.

UR - http://www.scopus.com/inward/record.url?scp=0026107077&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0026107077&partnerID=8YFLogxK

U2 - 10.1109/16.69912

DO - 10.1109/16.69912

M3 - Article

VL - 38

SP - 316

EP - 322

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

SN - 0018-9383

IS - 2

ER -