Ion implantation and annealing of undoped (Al,Ga)As/GaAs heterostructures

H. Baratte, Thomas Nelson Jackson, P. M. Solomon, D. C. Latulipe, D. J. Frank, J. S. Moore

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Abstract

Electrical measurements of n+-GaAs/π-(Al,Ga)As/π-GaAs semiconductor-insulator-semiconductor (SIS) heterostructure capacitors and field-effect transistors (FET's) show that the (Al,Ga)As/GaAs heterojunction abruptness is well preserved for an arsine flash anneal of 1 s at temperatures up to ∼900°C. The heterostructure stability is also preserved for a low-dose silicon implant across the (Al,Ga)As/GaAs heterojunction and subsequent annealing. Arsenic overpressure is found to be necessary, even for short time annealing, to prevent excessive As loss from a GaAs or (Al,Ga)As surface. High mobility enhance-deplete heterostructure SISFET's with sharp current versus voltage (I-V) turn-on characteristics have been fabricated using ion implantation and arsine flash anneal.

Original languageEnglish (US)
Pages (from-to)1459-1461
Number of pages3
JournalApplied Physics Letters
Volume51
Issue number18
DOIs
Publication statusPublished - Dec 1 1987

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All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

Baratte, H., Jackson, T. N., Solomon, P. M., Latulipe, D. C., Frank, D. J., & Moore, J. S. (1987). Ion implantation and annealing of undoped (Al,Ga)As/GaAs heterostructures. Applied Physics Letters, 51(18), 1459-1461. https://doi.org/10.1063/1.98657