Ion-implantation-induced damage characteristics within AlN and si for GaN-on-Si epitaxy

Jeffrey M. Leathersich, Mihir Tungare, Xiaojun Weng, Puneet Suvarna, Pratik Agnihotri, Morgan Evans, Joan Redwing, F. Shahedipour-Sandvik

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

A systematic study was conducted to further understand the physical origin of stress modification in AlN overgrown on Si(111) upon ion implantation and annealing. Implantation parameters including ion size, energy, dosage, and current density were varied, and their effects on the amorphization process in Si(111) substrates were examined. The creation of a thick (>120 nm) amorphous Si (a-Si) layer was previously shown to result in isolation of an epitaxial AlN film grown on a Si(111) substrate through implantation-induced amorphization of the substrate, and this mechanical isolation resulted in stress dilution in the AlN layer. Results show that implanting at current density of 2 mA/cm 2 allows for only a thin amorphous layer to be created because of the effects of dynamic annealing, which simultaneously eliminates any damage created from the ion implantation, regardless of ion species, dosage, and energy. Lowering the current density to 0.2 mA/cm2 does create a thick a-Si layer; however, the amorphization disappears during a high-temperature (HT) anneal. Lowering the current further to 0.2 μA/cm 2 creates a thick a-Si layer that can be maintained through a HT anneal, with this difference arising from the interfacial quality of the a-Si and crystalline Si (c-Si) boundary.

Original languageEnglish (US)
Pages (from-to)833-837
Number of pages5
JournalJournal of Electronic Materials
Volume42
Issue number5
DOIs
StatePublished - Mar 11 2013

Fingerprint

Epitaxial growth
Ion implantation
epitaxy
ion implantation
Amorphization
damage
Current density
current density
implantation
isolation
Substrates
Annealing
Ions
dosage
annealing
Epitaxial films
Dilution
dilution
ions
flux density

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this

Leathersich, J. M., Tungare, M., Weng, X., Suvarna, P., Agnihotri, P., Evans, M., ... Shahedipour-Sandvik, F. (2013). Ion-implantation-induced damage characteristics within AlN and si for GaN-on-Si epitaxy. Journal of Electronic Materials, 42(5), 833-837. https://doi.org/10.1007/s11664-013-2491-5
Leathersich, Jeffrey M. ; Tungare, Mihir ; Weng, Xiaojun ; Suvarna, Puneet ; Agnihotri, Pratik ; Evans, Morgan ; Redwing, Joan ; Shahedipour-Sandvik, F. / Ion-implantation-induced damage characteristics within AlN and si for GaN-on-Si epitaxy. In: Journal of Electronic Materials. 2013 ; Vol. 42, No. 5. pp. 833-837.
@article{f6e778361d9a4b92a9efff37e15f5ee9,
title = "Ion-implantation-induced damage characteristics within AlN and si for GaN-on-Si epitaxy",
abstract = "A systematic study was conducted to further understand the physical origin of stress modification in AlN overgrown on Si(111) upon ion implantation and annealing. Implantation parameters including ion size, energy, dosage, and current density were varied, and their effects on the amorphization process in Si(111) substrates were examined. The creation of a thick (>120 nm) amorphous Si (a-Si) layer was previously shown to result in isolation of an epitaxial AlN film grown on a Si(111) substrate through implantation-induced amorphization of the substrate, and this mechanical isolation resulted in stress dilution in the AlN layer. Results show that implanting at current density of 2 mA/cm 2 allows for only a thin amorphous layer to be created because of the effects of dynamic annealing, which simultaneously eliminates any damage created from the ion implantation, regardless of ion species, dosage, and energy. Lowering the current density to 0.2 mA/cm2 does create a thick a-Si layer; however, the amorphization disappears during a high-temperature (HT) anneal. Lowering the current further to 0.2 μA/cm 2 creates a thick a-Si layer that can be maintained through a HT anneal, with this difference arising from the interfacial quality of the a-Si and crystalline Si (c-Si) boundary.",
author = "Leathersich, {Jeffrey M.} and Mihir Tungare and Xiaojun Weng and Puneet Suvarna and Pratik Agnihotri and Morgan Evans and Joan Redwing and F. Shahedipour-Sandvik",
year = "2013",
month = "3",
day = "11",
doi = "10.1007/s11664-013-2491-5",
language = "English (US)",
volume = "42",
pages = "833--837",
journal = "Journal of Electronic Materials",
issn = "0361-5235",
publisher = "Springer New York",
number = "5",

}

Leathersich, JM, Tungare, M, Weng, X, Suvarna, P, Agnihotri, P, Evans, M, Redwing, J & Shahedipour-Sandvik, F 2013, 'Ion-implantation-induced damage characteristics within AlN and si for GaN-on-Si epitaxy', Journal of Electronic Materials, vol. 42, no. 5, pp. 833-837. https://doi.org/10.1007/s11664-013-2491-5

Ion-implantation-induced damage characteristics within AlN and si for GaN-on-Si epitaxy. / Leathersich, Jeffrey M.; Tungare, Mihir; Weng, Xiaojun; Suvarna, Puneet; Agnihotri, Pratik; Evans, Morgan; Redwing, Joan; Shahedipour-Sandvik, F.

In: Journal of Electronic Materials, Vol. 42, No. 5, 11.03.2013, p. 833-837.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Ion-implantation-induced damage characteristics within AlN and si for GaN-on-Si epitaxy

AU - Leathersich, Jeffrey M.

AU - Tungare, Mihir

AU - Weng, Xiaojun

AU - Suvarna, Puneet

AU - Agnihotri, Pratik

AU - Evans, Morgan

AU - Redwing, Joan

AU - Shahedipour-Sandvik, F.

PY - 2013/3/11

Y1 - 2013/3/11

N2 - A systematic study was conducted to further understand the physical origin of stress modification in AlN overgrown on Si(111) upon ion implantation and annealing. Implantation parameters including ion size, energy, dosage, and current density were varied, and their effects on the amorphization process in Si(111) substrates were examined. The creation of a thick (>120 nm) amorphous Si (a-Si) layer was previously shown to result in isolation of an epitaxial AlN film grown on a Si(111) substrate through implantation-induced amorphization of the substrate, and this mechanical isolation resulted in stress dilution in the AlN layer. Results show that implanting at current density of 2 mA/cm 2 allows for only a thin amorphous layer to be created because of the effects of dynamic annealing, which simultaneously eliminates any damage created from the ion implantation, regardless of ion species, dosage, and energy. Lowering the current density to 0.2 mA/cm2 does create a thick a-Si layer; however, the amorphization disappears during a high-temperature (HT) anneal. Lowering the current further to 0.2 μA/cm 2 creates a thick a-Si layer that can be maintained through a HT anneal, with this difference arising from the interfacial quality of the a-Si and crystalline Si (c-Si) boundary.

AB - A systematic study was conducted to further understand the physical origin of stress modification in AlN overgrown on Si(111) upon ion implantation and annealing. Implantation parameters including ion size, energy, dosage, and current density were varied, and their effects on the amorphization process in Si(111) substrates were examined. The creation of a thick (>120 nm) amorphous Si (a-Si) layer was previously shown to result in isolation of an epitaxial AlN film grown on a Si(111) substrate through implantation-induced amorphization of the substrate, and this mechanical isolation resulted in stress dilution in the AlN layer. Results show that implanting at current density of 2 mA/cm 2 allows for only a thin amorphous layer to be created because of the effects of dynamic annealing, which simultaneously eliminates any damage created from the ion implantation, regardless of ion species, dosage, and energy. Lowering the current density to 0.2 mA/cm2 does create a thick a-Si layer; however, the amorphization disappears during a high-temperature (HT) anneal. Lowering the current further to 0.2 μA/cm 2 creates a thick a-Si layer that can be maintained through a HT anneal, with this difference arising from the interfacial quality of the a-Si and crystalline Si (c-Si) boundary.

UR - http://www.scopus.com/inward/record.url?scp=84878557571&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84878557571&partnerID=8YFLogxK

U2 - 10.1007/s11664-013-2491-5

DO - 10.1007/s11664-013-2491-5

M3 - Article

AN - SCOPUS:84878557571

VL - 42

SP - 833

EP - 837

JO - Journal of Electronic Materials

JF - Journal of Electronic Materials

SN - 0361-5235

IS - 5

ER -