Ion intercalation engineering of electronic properties of two-dimensional crystals of 2H-TaSe2

Yueshen Wu, Hui Xing, Chao Sheng Lian, Hailong Lian, Jiaming He, Wenhui Duan, Jinyu Liu, Zhiqiang Mao, Ying Liu

Research output: Contribution to journalArticle

Abstract

Ion intercalation was recently used to explore two-dimensional (2D) transition metal dichalcogenides (TMDs) with precise tuning of ion concentration in a field-effect-transistor configuration. However, how to systematically change the properties of 2D TMDs, e.g., superconductivity and charge density waves, by ion intercalation has not been explored. We report in this paper results of electrical transport measurements on 2D crystals of 2H-TaSe2 intercalated with Li ions that is tuned continuously by ionic gating. Shubnikov-de Haas magnetoconductance oscillation and Hall coefficient measurements on crystals of 2H-TaSe2 revealed an ion intercalation induced multi- to single-band change in the Fermi surface (FS) topology, deep in the charge density wave phase, resulting in a reduction of the number of independent channels for electronic conduction. A remarkable crossover from weak antilocalization to weak localization tuned by gate voltage or temperature was found and attributed to the ion intercalation induced variations in the spin-orbital coupling and electron-phonon interaction. These observations provide new insight into the enhancement of superconductivity and the suppression of charge density waves in 2D 2H-TaSe2 induced by ion intercalation and demonstrate furthermore the great potential of ion intercalation for engineering electronic properties of 2D TMDs.

Original languageEnglish (US)
Article number104003
JournalPhysical Review Materials
Volume3
Issue number10
DOIs
StatePublished - Oct 28 2019

Fingerprint

Intercalation
intercalation
Electronic properties
engineering
Ions
Crystals
electronics
Charge density waves
crystals
ions
Transition metals
transition metals
Superconductivity
superconductivity
Electron-phonon interactions
Fermi surface
ion concentration
electron phonon interactions
Fermi surfaces
Field effect transistors

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Physics and Astronomy (miscellaneous)

Cite this

Wu, Yueshen ; Xing, Hui ; Lian, Chao Sheng ; Lian, Hailong ; He, Jiaming ; Duan, Wenhui ; Liu, Jinyu ; Mao, Zhiqiang ; Liu, Ying. / Ion intercalation engineering of electronic properties of two-dimensional crystals of 2H-TaSe2. In: Physical Review Materials. 2019 ; Vol. 3, No. 10.
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Ion intercalation engineering of electronic properties of two-dimensional crystals of 2H-TaSe2. / Wu, Yueshen; Xing, Hui; Lian, Chao Sheng; Lian, Hailong; He, Jiaming; Duan, Wenhui; Liu, Jinyu; Mao, Zhiqiang; Liu, Ying.

In: Physical Review Materials, Vol. 3, No. 10, 104003, 28.10.2019.

Research output: Contribution to journalArticle

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AU - Xing, Hui

AU - Lian, Chao Sheng

AU - Lian, Hailong

AU - He, Jiaming

AU - Duan, Wenhui

AU - Liu, Jinyu

AU - Mao, Zhiqiang

AU - Liu, Ying

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