Ionic gated WSe2 FETs: Towards transparent Schottky barriers

Abhijith Prakash, Saptarshi Das, Ruchit Mehta, Zhihong Chen, Joerg Appenzeller

Research output: Chapter in Book/Report/Conference proceedingConference contribution

5 Citations (Scopus)

Abstract

In this article, we experimentally demonstrate for the first time high performance ionic liquid gated Schottky barrier WSe2 FETs with large current drive capabilities for both the electron and the hole branch. We also show that through proper scaling of the flake thickness, the Schottky barrier can be made transparent to the carrier injection and thus transforming the metal contacts into pseudo-Ohmic ones. We also analyzed the tunneling current through the Schottky barrier and compared it with numerical simulations in order to evaluate the potential of WSe2 for low power applications. WSe 2 belongs to the family of two-dimensional layered semiconducting transition metal dichalcogenides (TMDs) which have received substantial attention in the device community as alternative channel materials to Si. [1] WSe2 is especially interesting since it shows ambipolar conduction due to the pinning of metal Fermi level close to the middle of the bandgap. [2] In addition, the relatively small carrier effective mass [3] of WSe2 in comparison to other TMDs makes this material appealing for low power tunneling devices.

Original languageEnglish (US)
Title of host publication72nd Device Research Conference, DRC 2014 - Conference Digest
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages129-130
Number of pages2
ISBN (Print)9781479954056
DOIs
StatePublished - Jan 1 2014
Event72nd Device Research Conference, DRC 2014 - Santa Barbara, CA, United States
Duration: Jun 22 2014Jun 25 2014

Publication series

NameDevice Research Conference - Conference Digest, DRC
ISSN (Print)1548-3770

Other

Other72nd Device Research Conference, DRC 2014
CountryUnited States
CitySanta Barbara, CA
Period6/22/146/25/14

Fingerprint

Field effect transistors
Transition metals
Fermi level
Metals
Ionic liquids
Energy gap
Electrons
Computer simulation

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

Cite this

Prakash, A., Das, S., Mehta, R., Chen, Z., & Appenzeller, J. (2014). Ionic gated WSe2 FETs: Towards transparent Schottky barriers. In 72nd Device Research Conference, DRC 2014 - Conference Digest (pp. 129-130). [6872331] (Device Research Conference - Conference Digest, DRC). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/DRC.2014.6872331
Prakash, Abhijith ; Das, Saptarshi ; Mehta, Ruchit ; Chen, Zhihong ; Appenzeller, Joerg. / Ionic gated WSe2 FETs : Towards transparent Schottky barriers. 72nd Device Research Conference, DRC 2014 - Conference Digest. Institute of Electrical and Electronics Engineers Inc., 2014. pp. 129-130 (Device Research Conference - Conference Digest, DRC).
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Prakash, A, Das, S, Mehta, R, Chen, Z & Appenzeller, J 2014, Ionic gated WSe2 FETs: Towards transparent Schottky barriers. in 72nd Device Research Conference, DRC 2014 - Conference Digest., 6872331, Device Research Conference - Conference Digest, DRC, Institute of Electrical and Electronics Engineers Inc., pp. 129-130, 72nd Device Research Conference, DRC 2014, Santa Barbara, CA, United States, 6/22/14. https://doi.org/10.1109/DRC.2014.6872331

Ionic gated WSe2 FETs : Towards transparent Schottky barriers. / Prakash, Abhijith; Das, Saptarshi; Mehta, Ruchit; Chen, Zhihong; Appenzeller, Joerg.

72nd Device Research Conference, DRC 2014 - Conference Digest. Institute of Electrical and Electronics Engineers Inc., 2014. p. 129-130 6872331 (Device Research Conference - Conference Digest, DRC).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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Prakash A, Das S, Mehta R, Chen Z, Appenzeller J. Ionic gated WSe2 FETs: Towards transparent Schottky barriers. In 72nd Device Research Conference, DRC 2014 - Conference Digest. Institute of Electrical and Electronics Engineers Inc. 2014. p. 129-130. 6872331. (Device Research Conference - Conference Digest, DRC). https://doi.org/10.1109/DRC.2014.6872331