Ionizing Radiation Effects in 4H-SiC nMOSFETs Studied with Electrically Detected Magnetic Resonance

Ryan J. Waskiewicz, Mark A. Anders, Patrick M. Lenahan, Aivars J. Lelis

Research output: Contribution to journalArticle

7 Scopus citations

Abstract

Electrically detected magnetic resonance (EDMR) measurements of 4H-SiC/SiO2 metal-oxide-semiconductor field-effect transistors (MOSFETs) show large changes in the EDMR induced by gamma irradiation, indicating substantial changes in interface structure but, surprisingly, no generation of interface dangling bond defects. Our results indicate substantial fundamental atomic scale differences between radiation responses of Si/SiO2 based MOSFETs and SiC/SiO2 based MOSFETs.

Original languageEnglish (US)
Article number7707457
Pages (from-to)197-203
Number of pages7
JournalIEEE Transactions on Nuclear Science
Volume64
Issue number1
DOIs
StatePublished - Jan 2017

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All Science Journal Classification (ASJC) codes

  • Nuclear and High Energy Physics
  • Nuclear Energy and Engineering
  • Electrical and Electronic Engineering

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