Ionizing Radiation Effects in 4H-SiC nMOSFETs Studied with Electrically Detected Magnetic Resonance

Ryan J. Waskiewicz, Mark A. Anders, Patrick M. Lenahan, Aivars J. Lelis

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

Electrically detected magnetic resonance (EDMR) measurements of 4H-SiC/SiO2 metal-oxide-semiconductor field-effect transistors (MOSFETs) show large changes in the EDMR induced by gamma irradiation, indicating substantial changes in interface structure but, surprisingly, no generation of interface dangling bond defects. Our results indicate substantial fundamental atomic scale differences between radiation responses of Si/SiO2 based MOSFETs and SiC/SiO2 based MOSFETs.

Original languageEnglish (US)
Article number7707457
Pages (from-to)197-203
Number of pages7
JournalIEEE Transactions on Nuclear Science
Volume64
Issue number1
DOIs
StatePublished - Jan 2017

Fingerprint

Radiation effects
Ionizing radiation
MOSFET devices
radiation effects
Magnetic resonance
metal oxide semiconductors
ionizing radiation
magnetic resonance
field effect transistors
Magnetic resonance measurement
Dangling bonds
Irradiation
Radiation
Defects
irradiation
defects
radiation

All Science Journal Classification (ASJC) codes

  • Nuclear and High Energy Physics
  • Nuclear Energy and Engineering
  • Electrical and Electronic Engineering

Cite this

@article{db0d19692d974cb1a03b40e465dd6c79,
title = "Ionizing Radiation Effects in 4H-SiC nMOSFETs Studied with Electrically Detected Magnetic Resonance",
abstract = "Electrically detected magnetic resonance (EDMR) measurements of 4H-SiC/SiO2 metal-oxide-semiconductor field-effect transistors (MOSFETs) show large changes in the EDMR induced by gamma irradiation, indicating substantial changes in interface structure but, surprisingly, no generation of interface dangling bond defects. Our results indicate substantial fundamental atomic scale differences between radiation responses of Si/SiO2 based MOSFETs and SiC/SiO2 based MOSFETs.",
author = "Waskiewicz, {Ryan J.} and Anders, {Mark A.} and Lenahan, {Patrick M.} and Lelis, {Aivars J.}",
year = "2017",
month = "1",
doi = "10.1109/TNS.2016.2622159",
language = "English (US)",
volume = "64",
pages = "197--203",
journal = "IEEE Transactions on Nuclear Science",
issn = "0018-9499",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "1",

}

Ionizing Radiation Effects in 4H-SiC nMOSFETs Studied with Electrically Detected Magnetic Resonance. / Waskiewicz, Ryan J.; Anders, Mark A.; Lenahan, Patrick M.; Lelis, Aivars J.

In: IEEE Transactions on Nuclear Science, Vol. 64, No. 1, 7707457, 01.2017, p. 197-203.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Ionizing Radiation Effects in 4H-SiC nMOSFETs Studied with Electrically Detected Magnetic Resonance

AU - Waskiewicz, Ryan J.

AU - Anders, Mark A.

AU - Lenahan, Patrick M.

AU - Lelis, Aivars J.

PY - 2017/1

Y1 - 2017/1

N2 - Electrically detected magnetic resonance (EDMR) measurements of 4H-SiC/SiO2 metal-oxide-semiconductor field-effect transistors (MOSFETs) show large changes in the EDMR induced by gamma irradiation, indicating substantial changes in interface structure but, surprisingly, no generation of interface dangling bond defects. Our results indicate substantial fundamental atomic scale differences between radiation responses of Si/SiO2 based MOSFETs and SiC/SiO2 based MOSFETs.

AB - Electrically detected magnetic resonance (EDMR) measurements of 4H-SiC/SiO2 metal-oxide-semiconductor field-effect transistors (MOSFETs) show large changes in the EDMR induced by gamma irradiation, indicating substantial changes in interface structure but, surprisingly, no generation of interface dangling bond defects. Our results indicate substantial fundamental atomic scale differences between radiation responses of Si/SiO2 based MOSFETs and SiC/SiO2 based MOSFETs.

UR - http://www.scopus.com/inward/record.url?scp=85015763176&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85015763176&partnerID=8YFLogxK

U2 - 10.1109/TNS.2016.2622159

DO - 10.1109/TNS.2016.2622159

M3 - Article

AN - SCOPUS:85015763176

VL - 64

SP - 197

EP - 203

JO - IEEE Transactions on Nuclear Science

JF - IEEE Transactions on Nuclear Science

SN - 0018-9499

IS - 1

M1 - 7707457

ER -