Isostructural metal-insulator transition in VO2

D. Lee, B. Chung, Y. Shi, G. Y. Kim, N. Campbell, F. Xue, K. Song, S. Y. Choi, J. P. Podkaminer, T. H. Kim, P. J. Ryan, J. W. Kim, T. R. Paudel, J. H. Kang, J. W. Spinuzzi, D. A. Tenne, E. Y. Tsymbal, M. S. Rzchowski, L. Q. Chen, J. LeeC. B. Eom

Research output: Contribution to journalArticlepeer-review

55 Scopus citations

Abstract

The metal-insulator transition in correlated materials is usually coupled to a symmetry-lowering structural phase transition. This coupling not only complicates the understanding of the basic mechanism of this phenomenon but also limits the speed and endurance of prospective electronic devices. We demonstrate an isostructural, purely electronically driven metal-insulator transition in epitaxial heterostructures of an archetypal correlated material, vanadium dioxide. A combination of thin-film synthesis, structural and electrical characterizations, and theoretical modeling reveals that an interface interaction suppresses the electronic correlations without changing the crystal structure in this otherwise correlated insulator. This interaction stabilizes a nonequilibrium metallic phase and leads to an isostructural metal-insulator transition. This discovery will provide insights into phase transitions of correlated materials and may aid the design of device functionalities.

Original languageEnglish (US)
Pages (from-to)1037-1040
Number of pages4
JournalScience
Volume362
Issue number6418
DOIs
StatePublished - Nov 30 2018

All Science Journal Classification (ASJC) codes

  • General

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