Itinerant ferromagnetism and geometrically suppressed metal-insulator transition in epitaxial thin films of Ca 2RuO 4

Ludi Miao, Punam Silwal, Xiaolan Zhou, Ilan Stern, Jin Peng, Wenyong Zhang, Leonard Spinu, Zhiqiang Mao, Dae Ho Kim

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

We have investigated the effect of epitaxial strain on the electrical and magnetic properties of high quality Ca 2RuO 4 films on LaAlO 3 (001) substrates. The films exhibit low temperature itinerant ferromagnetic ground state and significantly suppressed metal-insulator transition due to epitaxial strain. An anomaly in the in-plane resistivity was also observed near the Néel temperature. Symmetry analysis of anisotropic magnetoresistance suggests a phase coexistence of ferromagnetic metal and antiferromagnetic insulator in ground state.

Original languageEnglish (US)
Article number052401
JournalApplied Physics Letters
Volume100
Issue number5
DOIs
StatePublished - Jan 30 2012

Fingerprint

ferromagnetism
insulators
ground state
thin films
metals
electrical properties
anomalies
magnetic properties
electrical resistivity
symmetry
temperature

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

Miao, Ludi ; Silwal, Punam ; Zhou, Xiaolan ; Stern, Ilan ; Peng, Jin ; Zhang, Wenyong ; Spinu, Leonard ; Mao, Zhiqiang ; Ho Kim, Dae. / Itinerant ferromagnetism and geometrically suppressed metal-insulator transition in epitaxial thin films of Ca 2RuO 4 In: Applied Physics Letters. 2012 ; Vol. 100, No. 5.
@article{2e8241fcda584216bc2eb43c6b565674,
title = "Itinerant ferromagnetism and geometrically suppressed metal-insulator transition in epitaxial thin films of Ca 2RuO 4",
abstract = "We have investigated the effect of epitaxial strain on the electrical and magnetic properties of high quality Ca 2RuO 4 films on LaAlO 3 (001) substrates. The films exhibit low temperature itinerant ferromagnetic ground state and significantly suppressed metal-insulator transition due to epitaxial strain. An anomaly in the in-plane resistivity was also observed near the N{\'e}el temperature. Symmetry analysis of anisotropic magnetoresistance suggests a phase coexistence of ferromagnetic metal and antiferromagnetic insulator in ground state.",
author = "Ludi Miao and Punam Silwal and Xiaolan Zhou and Ilan Stern and Jin Peng and Wenyong Zhang and Leonard Spinu and Zhiqiang Mao and {Ho Kim}, Dae",
year = "2012",
month = "1",
day = "30",
doi = "10.1063/1.3680250",
language = "English (US)",
volume = "100",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "5",

}

Itinerant ferromagnetism and geometrically suppressed metal-insulator transition in epitaxial thin films of Ca 2RuO 4 . / Miao, Ludi; Silwal, Punam; Zhou, Xiaolan; Stern, Ilan; Peng, Jin; Zhang, Wenyong; Spinu, Leonard; Mao, Zhiqiang; Ho Kim, Dae.

In: Applied Physics Letters, Vol. 100, No. 5, 052401, 30.01.2012.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Itinerant ferromagnetism and geometrically suppressed metal-insulator transition in epitaxial thin films of Ca 2RuO 4

AU - Miao, Ludi

AU - Silwal, Punam

AU - Zhou, Xiaolan

AU - Stern, Ilan

AU - Peng, Jin

AU - Zhang, Wenyong

AU - Spinu, Leonard

AU - Mao, Zhiqiang

AU - Ho Kim, Dae

PY - 2012/1/30

Y1 - 2012/1/30

N2 - We have investigated the effect of epitaxial strain on the electrical and magnetic properties of high quality Ca 2RuO 4 films on LaAlO 3 (001) substrates. The films exhibit low temperature itinerant ferromagnetic ground state and significantly suppressed metal-insulator transition due to epitaxial strain. An anomaly in the in-plane resistivity was also observed near the Néel temperature. Symmetry analysis of anisotropic magnetoresistance suggests a phase coexistence of ferromagnetic metal and antiferromagnetic insulator in ground state.

AB - We have investigated the effect of epitaxial strain on the electrical and magnetic properties of high quality Ca 2RuO 4 films on LaAlO 3 (001) substrates. The films exhibit low temperature itinerant ferromagnetic ground state and significantly suppressed metal-insulator transition due to epitaxial strain. An anomaly in the in-plane resistivity was also observed near the Néel temperature. Symmetry analysis of anisotropic magnetoresistance suggests a phase coexistence of ferromagnetic metal and antiferromagnetic insulator in ground state.

UR - http://www.scopus.com/inward/record.url?scp=84863011879&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84863011879&partnerID=8YFLogxK

U2 - 10.1063/1.3680250

DO - 10.1063/1.3680250

M3 - Article

AN - SCOPUS:84863011879

VL - 100

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 5

M1 - 052401

ER -