Kinetic energy enhanced molecular beam epitaxial growth of Si{100}

Barbara J. Garrison, Mitchel T. Miller, Donald W. Brenner

Research output: Contribution to journalArticle

18 Scopus citations

Abstract

For kinetic energy enhanced molecular beam epitaxial growth of Si{100} we show that there are direct mechanisms of dimer opening, i.e. unreconstruction, that lead to epitaxial growth. These unreconstructions occur on the femtosecond timescale rather than requiring the long times associated with surface diffusion. The opening energy range to be 5-10 eV.

Original languageEnglish (US)
Pages (from-to)553-556
Number of pages4
JournalChemical Physics Letters
Volume146
Issue number6
DOIs
StatePublished - May 20 1988

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)
  • Physical and Theoretical Chemistry

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