Kinetic Modeling of Grain Growth in Polycrystalline Silicon Films Doped with Phosphorus or Boron

Hojong Kim, C. V. Thompson

Research output: Contribution to journalArticle

30 Citations (Scopus)

Abstract

The effects of phosphorus and boron doping on normal grain growth in LPCVD-deposited Si films were investigated using transmission electron microscopy (TEM) in conjunction with Hall mobility measurements. While boron doping had little effect, phosphorus doping was found to substantially enhance grain growth. It is argued that phosphorus-enhanced grain growth occurs due to an increase in the grain boundary atomic mobility. A kinetic model is suggested which can be used to quantitatively predict the observed enhancement over wide ranges of temperature and doping. In this model, it is assumed that grain growth occurs through a diffusive process and/or a nondiffusive process. Phosphorus doping enhances the diffusive process by increasing the number of charged vacancies and therefore the total number of vacancies.

Original languageEnglish (US)
Pages (from-to)2312-2319
Number of pages8
JournalJournal of the Electrochemical Society
Volume135
Issue number9
DOIs
StatePublished - Jan 1 1988

Fingerprint

Boron
silicon films
Grain growth
Polysilicon
Phosphorus
phosphorus
boron
Doping (additives)
Kinetics
kinetics
Vacancies
atomic mobilities
Hall mobility
Grain boundaries
grain boundaries
Transmission electron microscopy
transmission electron microscopy
augmentation
Temperature

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment
  • Surfaces, Coatings and Films
  • Electrochemistry
  • Materials Chemistry

Cite this

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abstract = "The effects of phosphorus and boron doping on normal grain growth in LPCVD-deposited Si films were investigated using transmission electron microscopy (TEM) in conjunction with Hall mobility measurements. While boron doping had little effect, phosphorus doping was found to substantially enhance grain growth. It is argued that phosphorus-enhanced grain growth occurs due to an increase in the grain boundary atomic mobility. A kinetic model is suggested which can be used to quantitatively predict the observed enhancement over wide ranges of temperature and doping. In this model, it is assumed that grain growth occurs through a diffusive process and/or a nondiffusive process. Phosphorus doping enhances the diffusive process by increasing the number of charged vacancies and therefore the total number of vacancies.",
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Kinetic Modeling of Grain Growth in Polycrystalline Silicon Films Doped with Phosphorus or Boron. / Kim, Hojong; Thompson, C. V.

In: Journal of the Electrochemical Society, Vol. 135, No. 9, 01.01.1988, p. 2312-2319.

Research output: Contribution to journalArticle

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AB - The effects of phosphorus and boron doping on normal grain growth in LPCVD-deposited Si films were investigated using transmission electron microscopy (TEM) in conjunction with Hall mobility measurements. While boron doping had little effect, phosphorus doping was found to substantially enhance grain growth. It is argued that phosphorus-enhanced grain growth occurs due to an increase in the grain boundary atomic mobility. A kinetic model is suggested which can be used to quantitatively predict the observed enhancement over wide ranges of temperature and doping. In this model, it is assumed that grain growth occurs through a diffusive process and/or a nondiffusive process. Phosphorus doping enhances the diffusive process by increasing the number of charged vacancies and therefore the total number of vacancies.

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