Kinetic study of the oxidation of gallium nitride in dry air

S. D. Wolter, Suzanne E. Mohney, H. Venugopalan, A. E. Wickenden, D. D. Koleske

Research output: Contribution to journalArticle

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Abstract

The oxidation of polycrystalline GaN powder and GaN epi layers in dry air has been investigated. Bulk θ-2θ X-ray diffraction (XRD) revealed no evidence of oxide formation on the powder specimen exposed to temperatures of up to 750°C for 25 h. However, when oxidized at temperatures of 900°C or greater for 1 h or longer, an oxide was observed to form and was identified as the monoclinic β-Ga2O3, the same oxide observed previously by the present investigators to form on epitaxial GaN films. Information regarding the oxidation kinetics was obtained in the present study by measuring the intensity of the β-Ga2O3, (2 1 7) XRD peak as a function of oxidation time at various temperatures, and the initial stage of the oxidation was found to be limited by the rate of an interfacial reaction with an activation energy of ∼3 × 105 J/mol. An interfacial reaction-controlled mechanism was also observed to limit the rate of oxidation of GaN epi layers at 900°C.

Original languageEnglish (US)
Pages (from-to)629-632
Number of pages4
JournalJournal of the Electrochemical Society
Volume145
Issue number2
DOIs
StatePublished - Jan 1 1998

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Gallium nitride
Oxidation
Kinetics
Oxides
Air
Surface chemistry
Powders
X ray diffraction
Epitaxial films
Temperature
Activation energy
gallium nitride

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment
  • Surfaces, Coatings and Films
  • Electrochemistry
  • Materials Chemistry

Cite this

Wolter, S. D. ; Mohney, Suzanne E. ; Venugopalan, H. ; Wickenden, A. E. ; Koleske, D. D. / Kinetic study of the oxidation of gallium nitride in dry air. In: Journal of the Electrochemical Society. 1998 ; Vol. 145, No. 2. pp. 629-632.
@article{1acbe51f10954a329c1a82898207e118,
title = "Kinetic study of the oxidation of gallium nitride in dry air",
abstract = "The oxidation of polycrystalline GaN powder and GaN epi layers in dry air has been investigated. Bulk θ-2θ X-ray diffraction (XRD) revealed no evidence of oxide formation on the powder specimen exposed to temperatures of up to 750°C for 25 h. However, when oxidized at temperatures of 900°C or greater for 1 h or longer, an oxide was observed to form and was identified as the monoclinic β-Ga2O3, the same oxide observed previously by the present investigators to form on epitaxial GaN films. Information regarding the oxidation kinetics was obtained in the present study by measuring the intensity of the β-Ga2O3, (2 1 7) XRD peak as a function of oxidation time at various temperatures, and the initial stage of the oxidation was found to be limited by the rate of an interfacial reaction with an activation energy of ∼3 × 105 J/mol. An interfacial reaction-controlled mechanism was also observed to limit the rate of oxidation of GaN epi layers at 900°C.",
author = "Wolter, {S. D.} and Mohney, {Suzanne E.} and H. Venugopalan and Wickenden, {A. E.} and Koleske, {D. D.}",
year = "1998",
month = "1",
day = "1",
doi = "10.1149/1.1838314",
language = "English (US)",
volume = "145",
pages = "629--632",
journal = "Journal of the Electrochemical Society",
issn = "0013-4651",
publisher = "Electrochemical Society, Inc.",
number = "2",

}

Wolter, SD, Mohney, SE, Venugopalan, H, Wickenden, AE & Koleske, DD 1998, 'Kinetic study of the oxidation of gallium nitride in dry air', Journal of the Electrochemical Society, vol. 145, no. 2, pp. 629-632. https://doi.org/10.1149/1.1838314

Kinetic study of the oxidation of gallium nitride in dry air. / Wolter, S. D.; Mohney, Suzanne E.; Venugopalan, H.; Wickenden, A. E.; Koleske, D. D.

In: Journal of the Electrochemical Society, Vol. 145, No. 2, 01.01.1998, p. 629-632.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Kinetic study of the oxidation of gallium nitride in dry air

AU - Wolter, S. D.

AU - Mohney, Suzanne E.

AU - Venugopalan, H.

AU - Wickenden, A. E.

AU - Koleske, D. D.

PY - 1998/1/1

Y1 - 1998/1/1

N2 - The oxidation of polycrystalline GaN powder and GaN epi layers in dry air has been investigated. Bulk θ-2θ X-ray diffraction (XRD) revealed no evidence of oxide formation on the powder specimen exposed to temperatures of up to 750°C for 25 h. However, when oxidized at temperatures of 900°C or greater for 1 h or longer, an oxide was observed to form and was identified as the monoclinic β-Ga2O3, the same oxide observed previously by the present investigators to form on epitaxial GaN films. Information regarding the oxidation kinetics was obtained in the present study by measuring the intensity of the β-Ga2O3, (2 1 7) XRD peak as a function of oxidation time at various temperatures, and the initial stage of the oxidation was found to be limited by the rate of an interfacial reaction with an activation energy of ∼3 × 105 J/mol. An interfacial reaction-controlled mechanism was also observed to limit the rate of oxidation of GaN epi layers at 900°C.

AB - The oxidation of polycrystalline GaN powder and GaN epi layers in dry air has been investigated. Bulk θ-2θ X-ray diffraction (XRD) revealed no evidence of oxide formation on the powder specimen exposed to temperatures of up to 750°C for 25 h. However, when oxidized at temperatures of 900°C or greater for 1 h or longer, an oxide was observed to form and was identified as the monoclinic β-Ga2O3, the same oxide observed previously by the present investigators to form on epitaxial GaN films. Information regarding the oxidation kinetics was obtained in the present study by measuring the intensity of the β-Ga2O3, (2 1 7) XRD peak as a function of oxidation time at various temperatures, and the initial stage of the oxidation was found to be limited by the rate of an interfacial reaction with an activation energy of ∼3 × 105 J/mol. An interfacial reaction-controlled mechanism was also observed to limit the rate of oxidation of GaN epi layers at 900°C.

UR - http://www.scopus.com/inward/record.url?scp=0031996429&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0031996429&partnerID=8YFLogxK

U2 - 10.1149/1.1838314

DO - 10.1149/1.1838314

M3 - Article

AN - SCOPUS:0031996429

VL - 145

SP - 629

EP - 632

JO - Journal of the Electrochemical Society

JF - Journal of the Electrochemical Society

SN - 0013-4651

IS - 2

ER -