Kinetics of fatigue effect

V. Ya Shur, E. L. Rumyantsev, E. V. Nikolaeva, E. I. Shishkin, I. S. Baturin, M. Ozgul, C. A. Randall

Research output: Contribution to journalConference articlepeer-review

9 Citations (SciVal)


We propose and confirm by computer simulation that the kinetics of fatigue phenomenon during ac switching is due to evolution of spatial distribution of bias field. Arising and growth of frozen domains as a result of self-organized domain kinetics is studied. The simulated fatigue behavior is in accord with experimental data obtained during cyclic switching using triangular and rectangular field pulses in PZT films and PZN-PT single crystals.

Original languageEnglish (US)
Pages (from-to)117-132
Number of pages16
JournalIntegrated Ferroelectrics
Issue number1-4
StatePublished - 2001
Event12th International Symposium on Integrated Ferroelectrics - Aachen, Germany
Duration: Mar 12 2000Mar 15 2000

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Control and Systems Engineering
  • Ceramics and Composites
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry


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