KNACK: A hybrid spin-charge mixed-mode simulator for evaluating different genres of spin-transfer torque MRAM bit-cells

Xuanyao Fong, Sumeet K. Gupta, Niladri N. Mojumder, Sri Harsha Choday, Charles Augustine, Kaushik Roy

Research output: Chapter in Book/Report/Conference proceedingConference contribution

118 Scopus citations

Abstract

The storage device in spin-transfer torque MRAM (STT-MRAM) is the magnetic tunneling junction (MTJ) and several models for the MTJ have been proposed. However, a simulation framework that captures device physics at the atomistic level when simulating STT-MRAM at the bit-cell level is lacking. We propose a simulation framework (KNACK) which models the MTJ at the atomistic level using the Non-Equilibrium Green's Function (NEGF) formalism and uses the NEGF model in conjunction with our STT-MRAM bit-cell circuit model for circuit-level simulations. Our simulation framework accepts I-V and C-V characteristics of the access device input either as lookup tables or as compact models. We show that with appropriate device and bit-cell parameters, our simulation framework has the ability to capture MTJ physics and simulate different genres of STT-MRAM bit-cells with results in agreement with experiments.

Original languageEnglish (US)
Title of host publication2011 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2011
Pages51-54
Number of pages4
DOIs
StatePublished - 2011
Event2011 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2011 - Osaka, Japan
Duration: Sep 8 2011Sep 10 2011

Publication series

NameInternational Conference on Simulation of Semiconductor Processes and Devices, SISPAD

Other

Other2011 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2011
Country/TerritoryJapan
CityOsaka
Period9/8/119/10/11

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Computer Science Applications
  • Modeling and Simulation

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