KNACK: A hybrid spin-charge mixed-mode simulator for evaluating different genres of spin-transfer torque MRAM bit-cells

Xuanyao Fong, Sumeet Kumar Gupta, Niladri N. Mojumder, Sri Harsha Choday, Charles Augustine, Kaushik Roy

Research output: Chapter in Book/Report/Conference proceedingConference contribution

94 Citations (Scopus)

Abstract

The storage device in spin-transfer torque MRAM (STT-MRAM) is the magnetic tunneling junction (MTJ) and several models for the MTJ have been proposed. However, a simulation framework that captures device physics at the atomistic level when simulating STT-MRAM at the bit-cell level is lacking. We propose a simulation framework (KNACK) which models the MTJ at the atomistic level using the Non-Equilibrium Green's Function (NEGF) formalism and uses the NEGF model in conjunction with our STT-MRAM bit-cell circuit model for circuit-level simulations. Our simulation framework accepts I-V and C-V characteristics of the access device input either as lookup tables or as compact models. We show that with appropriate device and bit-cell parameters, our simulation framework has the ability to capture MTJ physics and simulate different genres of STT-MRAM bit-cells with results in agreement with experiments.

Original languageEnglish (US)
Title of host publication2011 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2011
Pages51-54
Number of pages4
DOIs
StatePublished - Nov 1 2011
Event2011 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2011 - Osaka, Japan
Duration: Sep 8 2011Sep 10 2011

Publication series

NameInternational Conference on Simulation of Semiconductor Processes and Devices, SISPAD

Other

Other2011 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2011
CountryJapan
CityOsaka
Period9/8/119/10/11

Fingerprint

Mixed Mode
Simulation Framework
Torque
Simulator
Simulators
Charge
Cell
Green's function
Non-equilibrium
Physics
Input Devices
Table lookup
Model
Networks (circuits)
Look-up Table
Experiment
Simulation
Experiments

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Computer Science Applications
  • Modeling and Simulation

Cite this

Fong, X., Gupta, S. K., Mojumder, N. N., Choday, S. H., Augustine, C., & Roy, K. (2011). KNACK: A hybrid spin-charge mixed-mode simulator for evaluating different genres of spin-transfer torque MRAM bit-cells. In 2011 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2011 (pp. 51-54). [6035047] (International Conference on Simulation of Semiconductor Processes and Devices, SISPAD). https://doi.org/10.1109/SISPAD.2011.6035047
Fong, Xuanyao ; Gupta, Sumeet Kumar ; Mojumder, Niladri N. ; Choday, Sri Harsha ; Augustine, Charles ; Roy, Kaushik. / KNACK : A hybrid spin-charge mixed-mode simulator for evaluating different genres of spin-transfer torque MRAM bit-cells. 2011 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2011. 2011. pp. 51-54 (International Conference on Simulation of Semiconductor Processes and Devices, SISPAD).
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Fong, X, Gupta, SK, Mojumder, NN, Choday, SH, Augustine, C & Roy, K 2011, KNACK: A hybrid spin-charge mixed-mode simulator for evaluating different genres of spin-transfer torque MRAM bit-cells. in 2011 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2011., 6035047, International Conference on Simulation of Semiconductor Processes and Devices, SISPAD, pp. 51-54, 2011 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2011, Osaka, Japan, 9/8/11. https://doi.org/10.1109/SISPAD.2011.6035047

KNACK : A hybrid spin-charge mixed-mode simulator for evaluating different genres of spin-transfer torque MRAM bit-cells. / Fong, Xuanyao; Gupta, Sumeet Kumar; Mojumder, Niladri N.; Choday, Sri Harsha; Augustine, Charles; Roy, Kaushik.

2011 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2011. 2011. p. 51-54 6035047 (International Conference on Simulation of Semiconductor Processes and Devices, SISPAD).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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Fong X, Gupta SK, Mojumder NN, Choday SH, Augustine C, Roy K. KNACK: A hybrid spin-charge mixed-mode simulator for evaluating different genres of spin-transfer torque MRAM bit-cells. In 2011 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2011. 2011. p. 51-54. 6035047. (International Conference on Simulation of Semiconductor Processes and Devices, SISPAD). https://doi.org/10.1109/SISPAD.2011.6035047