Landau levels of bilayer graphene in a WSe2/bilayer graphene van der Waals heterostructure

Ya Wen Chuang, Jing Li, Hailong Fu, Kenji Watanabe, Takashi Taniguchi, Jun Zhu

Research output: Contribution to journalArticlepeer-review

2 Scopus citations

Abstract

Heterostructures formed between two different van der Waals materials enable interactions and functionalities absent in each component. In this work we show that vicinity to an atomically thin WSe2 sheet dramatically impacts the energies of the symmetry-broken low Landau levels of bilayer graphene, possibly due to Coulomb screening. We present a systematic study of the magnetic field and electrical displacement field dependences of the Landau level gaps at filling factor ν=1, 2, 3, and compare to boron nitride encapsulated pristine bilayer graphene. The exchange-dominated energy splitting between the N=0 and 1 orbital wave functions is significantly enhanced, which leads to a modified phase diagram at filling factor ν=0 and larger energy gaps at ν=1 and 3 in WSe2/bilayer graphene heterostructures. The exchange-enhanced spin gap at ν=2, on the other hand, is reduced by approximately twofold. Our results demonstrate a possible way to engineer quantum Hall phenomena via van der Waals heterostructures.

Original languageEnglish (US)
Article number195402
JournalPhysical Review B
Volume100
Issue number19
DOIs
StatePublished - Nov 4 2019

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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