Landau quantization of topological surface states in Bi2Se 3

Peng Cheng; Canli Song; Tong Zhang; Yanyi Zhang; Yilin Wang; Jin Feng Jia; Jing Wang; Yayu Wang; Bang Fen Zhu; Xi Chen; Xucun Ma; Ke He; Lili Wang; Xi Dai; Zhong Fang; Xincheng Xie; Xiao Liang Qi; Chao Xing Liu; Shou Cheng Zhang; Qi Kun Xue

doi:10.1103/PhysRevLett.105.076801

Landau quantization of topological surface states in Bi₂Se ₃

Peng Cheng, Canli Song, Tong Zhang, Yanyi Zhang, Yilin Wang, Jin Feng Jia, Jing Wang, Yayu Wang, Bang Fen Zhu, Xi Chen, Xucun Ma, Ke He, Lili Wang, Xi Dai, Zhong Fang, Xincheng Xie, Xiao Liang Qi, Chao Xing Liu, Shou Cheng Zhang, Qi Kun Xue

Physics

Research output: Contribution to journal › Article › peer-review

334 Scopus citations

Abstract

We report the direct observation of Landau quantization in Bi ₂Se₃ thin films by using a low-temperature scanning tunneling microscope. In particular, we discovered the zeroth Landau level, which is predicted to give rise to the half-quantized Hall effect for the topological surface states. The existence of the discrete Landau levels (LLs) and the suppression of LLs by surface impurities strongly support the 2D nature of the topological states. These observations may eventually lead to the realization of quantum Hall effect in topological insulators.

Original language	English (US)
Article number	076801
Journal	Physical review letters
Volume	105
Issue number	7
DOIs	https://doi.org/10.1103/PhysRevLett.105.076801
State	Published - Aug 9 2010

All Science Journal Classification (ASJC) codes

Physics and Astronomy(all)

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10.1103/PhysRevLett.105.076801

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Cheng, P., Song, C., Zhang, T., Zhang, Y., Wang, Y., Jia, J. F., Wang, J., Wang, Y., Zhu, B. F., Chen, X., Ma, X., He, K., Wang, L., Dai, X., Fang, Z., Xie, X., Qi, X. L., Liu, C. X., Zhang, S. C., & Xue, Q. K. (2010). Landau quantization of topological surface states in Bi₂Se ₃. Physical review letters, 105(7), [076801]. https://doi.org/10.1103/PhysRevLett.105.076801

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title = "Landau quantization of topological surface states in Bi2Se 3",

abstract = "We report the direct observation of Landau quantization in Bi 2Se3 thin films by using a low-temperature scanning tunneling microscope. In particular, we discovered the zeroth Landau level, which is predicted to give rise to the half-quantized Hall effect for the topological surface states. The existence of the discrete Landau levels (LLs) and the suppression of LLs by surface impurities strongly support the 2D nature of the topological states. These observations may eventually lead to the realization of quantum Hall effect in topological insulators.",

author = "Peng Cheng and Canli Song and Tong Zhang and Yanyi Zhang and Yilin Wang and Jia, {Jin Feng} and Jing Wang and Yayu Wang and Zhu, {Bang Fen} and Xi Chen and Xucun Ma and Ke He and Lili Wang and Xi Dai and Zhong Fang and Xincheng Xie and Qi, {Xiao Liang} and Liu, {Chao Xing} and Zhang, {Shou Cheng} and Xue, {Qi Kun}",

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doi = "10.1103/PhysRevLett.105.076801",

language = "English (US)",

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AU - Cheng, Peng

AU - Song, Canli

AU - Zhang, Tong

AU - Zhang, Yanyi

AU - Wang, Yilin

AU - Jia, Jin Feng

AU - Wang, Jing

AU - Wang, Yayu

AU - Zhu, Bang Fen

AU - Chen, Xi

AU - Ma, Xucun

AU - He, Ke

AU - Wang, Lili

AU - Dai, Xi

AU - Fang, Zhong

AU - Xie, Xincheng

AU - Qi, Xiao Liang

AU - Liu, Chao Xing

AU - Zhang, Shou Cheng

AU - Xue, Qi Kun

PY - 2010/8/9

Y1 - 2010/8/9

N2 - We report the direct observation of Landau quantization in Bi 2Se3 thin films by using a low-temperature scanning tunneling microscope. In particular, we discovered the zeroth Landau level, which is predicted to give rise to the half-quantized Hall effect for the topological surface states. The existence of the discrete Landau levels (LLs) and the suppression of LLs by surface impurities strongly support the 2D nature of the topological states. These observations may eventually lead to the realization of quantum Hall effect in topological insulators.

AB - We report the direct observation of Landau quantization in Bi 2Se3 thin films by using a low-temperature scanning tunneling microscope. In particular, we discovered the zeroth Landau level, which is predicted to give rise to the half-quantized Hall effect for the topological surface states. The existence of the discrete Landau levels (LLs) and the suppression of LLs by surface impurities strongly support the 2D nature of the topological states. These observations may eventually lead to the realization of quantum Hall effect in topological insulators.

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Landau quantization of topological surface states in Bi₂Se ₃

Abstract

All Science Journal Classification (ASJC) codes

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