Landau quantization of topological surface states in Bi2Se 3

Peng Cheng, Canli Song, Tong Zhang, Yanyi Zhang, Yilin Wang, Jin Feng Jia, Jing Wang, Yayu Wang, Bang Fen Zhu, Xi Chen, Xucun Ma, Ke He, Lili Wang, Xi Dai, Zhong Fang, Xincheng Xie, Xiao Liang Qi, Chao Xing Liu, Shou Cheng Zhang, Qi Kun Xue

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Abstract

We report the direct observation of Landau quantization in Bi 2Se3 thin films by using a low-temperature scanning tunneling microscope. In particular, we discovered the zeroth Landau level, which is predicted to give rise to the half-quantized Hall effect for the topological surface states. The existence of the discrete Landau levels (LLs) and the suppression of LLs by surface impurities strongly support the 2D nature of the topological states. These observations may eventually lead to the realization of quantum Hall effect in topological insulators.

Original languageEnglish (US)
Article number076801
JournalPhysical Review Letters
Volume105
Issue number7
DOIs
StatePublished - Aug 9 2010

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All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

Cheng, P., Song, C., Zhang, T., Zhang, Y., Wang, Y., Jia, J. F., Wang, J., Wang, Y., Zhu, B. F., Chen, X., Ma, X., He, K., Wang, L., Dai, X., Fang, Z., Xie, X., Qi, X. L., Liu, C. X., Zhang, S. C., & Xue, Q. K. (2010). Landau quantization of topological surface states in Bi2Se 3. Physical Review Letters, 105(7), [076801]. https://doi.org/10.1103/PhysRevLett.105.076801