Large anisotropic normal-state magnetoresistance in clean MgB2 thin films

Qi Li, B. T. Liu, Y. F. Hu, J. Chen, H. Gao, L. Shan, H. H. Wen, A. V. Pogrebnyakov, J. M. Redwing, X. X. Xi

Research output: Contribution to journalArticle

57 Scopus citations

Abstract

We report a large normal-state magnetoresistance with temperature-dependent anisotropy in very clean epitaxial MgB2 thin films (residual resistivity much smaller than 1μΩcm) grown by hybrid physical-chemical vapor deposition. The magnetoresistance shows a complex dependence on the orientation of the applied magnetic field, with a large magnetoresistance (Δρ/ρ0= 136%) observed for the field H ab plane. The angular dependence changes dramatically as the temperature is increased, and at high temperatures the magnetoresistance maximum changes to Hab. We attribute the large magnetoresistance and the evolution of its angular dependence with temperature to the multiple bands with different Fermi surface topology in MgB2 and the relative scattering rates of the σ and π bands, which vary with temperature due to stronger electron-phonon coupling for the σ bands.

Original languageEnglish (US)
Article number167003
JournalPhysical Review Letters
Volume96
Issue number16
DOIs
Publication statusPublished - May 11 2006

    Fingerprint

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

Li, Q., Liu, B. T., Hu, Y. F., Chen, J., Gao, H., Shan, L., ... Xi, X. X. (2006). Large anisotropic normal-state magnetoresistance in clean MgB2 thin films. Physical Review Letters, 96(16), [167003]. https://doi.org/10.1103/PhysRevLett.96.167003