Large-Area, Single-Layer Molybdenum Disulfide Synthesized at BEOL Compatible Temperature as Cu Diffusion Barrier

Chun Li Lo, Kehao Zhang, Ryan Scott Smith, Ketan Shah, Joshua A. Robinson, Zhihong Chen

Research output: Contribution to journalArticlepeer-review

16 Scopus citations


The scaling limit of conventional Cu diffusion barriers has become the bottleneck for interconnect technology, which in turn limits the IC performance. Sub-nm diffusion barrier is urgently demanded to maintain the interconnect resistivity for ultra-scaled Cu interconnects. However, with this thickness, the blocking capabilities of conventional Cu diffusion barriers are lost. In this letter, sub-nm Cu diffusion barrier is realized by single-layer molybdenum disulfide (MoS2) grown at 400 °C using metal-organic chemical vapor deposition. MoS2 is directly grown on dielectrics without transfer processes and the continuous coverage in a large area (>1 cm2) is achieved. Its resistance to Cu diffusion is investigated by time-dependent dielectric breakdown (TDDB) measurements. Our results indicate that the MoS2 barrier can efficiently suppress Cu diffusion and enhance dielectric lifetime significantly. Although a few challenges, including Cu adhesion to the MoS2 surface and integration with the Damascene structure, have to be assessed before introducing this novel material to the back-end-of-line technology, our work lays the groundwork for further investigation.

Original languageEnglish (US)
Pages (from-to)873-876
Number of pages4
JournalIEEE Electron Device Letters
Issue number6
StatePublished - Jun 2018

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering


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