Large diameter PVT growth of bulk 6H SiC crystals

David W. Snyder, V. D. Heydemann, W. J. Everson, D. L. Barrett

Research output: Contribution to journalConference article

9 Citations (Scopus)

Abstract

Within the past year we have grown SiC boules and produced wafers of 25, 35, 41, 50, 75 and 100 mm diameter in custom-desired physical vapor transport (PVT) furnaces. By synthesizing high purity SiC source material, controlling defect introduction during growth initiation, and optimizing hot zone geometry, we have increased the monocrystalline area in 50 to 100 mm substrates and have reduced micropipe densities in our 35 mm and 41 mm substrates to below 300 cm-2.

Original languageEnglish (US)
JournalMaterials Science Forum
Volume338
StatePublished - Jan 1 2000
EventICSCRM '99: The International Conference on Silicon Carbide and Related Materials - Research Triangle Park, NC, USA
Duration: Oct 10 1999Oct 15 1999

Fingerprint

Vapors
boules
vapors
Crystals
Substrates
crystals
furnaces
purity
Furnaces
wafers
Defects
Geometry
defects
geometry

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Snyder, D. W., Heydemann, V. D., Everson, W. J., & Barrett, D. L. (2000). Large diameter PVT growth of bulk 6H SiC crystals. Materials Science Forum, 338.
Snyder, David W. ; Heydemann, V. D. ; Everson, W. J. ; Barrett, D. L. / Large diameter PVT growth of bulk 6H SiC crystals. In: Materials Science Forum. 2000 ; Vol. 338.
@article{17b0ca4785414b80b0f8c5ae20e4fece,
title = "Large diameter PVT growth of bulk 6H SiC crystals",
abstract = "Within the past year we have grown SiC boules and produced wafers of 25, 35, 41, 50, 75 and 100 mm diameter in custom-desired physical vapor transport (PVT) furnaces. By synthesizing high purity SiC source material, controlling defect introduction during growth initiation, and optimizing hot zone geometry, we have increased the monocrystalline area in 50 to 100 mm substrates and have reduced micropipe densities in our 35 mm and 41 mm substrates to below 300 cm-2.",
author = "Snyder, {David W.} and Heydemann, {V. D.} and Everson, {W. J.} and Barrett, {D. L.}",
year = "2000",
month = "1",
day = "1",
language = "English (US)",
volume = "338",
journal = "Materials Science Forum",
issn = "0255-5476",
publisher = "Trans Tech Publications",

}

Snyder, DW, Heydemann, VD, Everson, WJ & Barrett, DL 2000, 'Large diameter PVT growth of bulk 6H SiC crystals', Materials Science Forum, vol. 338.

Large diameter PVT growth of bulk 6H SiC crystals. / Snyder, David W.; Heydemann, V. D.; Everson, W. J.; Barrett, D. L.

In: Materials Science Forum, Vol. 338, 01.01.2000.

Research output: Contribution to journalConference article

TY - JOUR

T1 - Large diameter PVT growth of bulk 6H SiC crystals

AU - Snyder, David W.

AU - Heydemann, V. D.

AU - Everson, W. J.

AU - Barrett, D. L.

PY - 2000/1/1

Y1 - 2000/1/1

N2 - Within the past year we have grown SiC boules and produced wafers of 25, 35, 41, 50, 75 and 100 mm diameter in custom-desired physical vapor transport (PVT) furnaces. By synthesizing high purity SiC source material, controlling defect introduction during growth initiation, and optimizing hot zone geometry, we have increased the monocrystalline area in 50 to 100 mm substrates and have reduced micropipe densities in our 35 mm and 41 mm substrates to below 300 cm-2.

AB - Within the past year we have grown SiC boules and produced wafers of 25, 35, 41, 50, 75 and 100 mm diameter in custom-desired physical vapor transport (PVT) furnaces. By synthesizing high purity SiC source material, controlling defect introduction during growth initiation, and optimizing hot zone geometry, we have increased the monocrystalline area in 50 to 100 mm substrates and have reduced micropipe densities in our 35 mm and 41 mm substrates to below 300 cm-2.

UR - http://www.scopus.com/inward/record.url?scp=0033713819&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0033713819&partnerID=8YFLogxK

M3 - Conference article

VL - 338

JO - Materials Science Forum

JF - Materials Science Forum

SN - 0255-5476

ER -

Snyder DW, Heydemann VD, Everson WJ, Barrett DL. Large diameter PVT growth of bulk 6H SiC crystals. Materials Science Forum. 2000 Jan 1;338.