Large diameter PVT growth of bulk 6H SiC crystals

D. W. Snyder, V. D. Heydemann, W. J. Everson, D. L. Barrett

Research output: Contribution to journalConference article

9 Scopus citations

Abstract

Within the past year we have grown SiC boules and produced wafers of 25, 35, 41, 50, 75 and 100 mm diameter in custom-desired physical vapor transport (PVT) furnaces. By synthesizing high purity SiC source material, controlling defect introduction during growth initiation, and optimizing hot zone geometry, we have increased the monocrystalline area in 50 to 100 mm substrates and have reduced micropipe densities in our 35 mm and 41 mm substrates to below 300 cm-2.

Original languageEnglish (US)
Pages (from-to)I/-
JournalMaterials Science Forum
Volume338
StatePublished - Jan 1 2000
EventICSCRM '99: The International Conference on Silicon Carbide and Related Materials - Research Triangle Park, NC, USA
Duration: Oct 10 1999Oct 15 1999

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All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Snyder, D. W., Heydemann, V. D., Everson, W. J., & Barrett, D. L. (2000). Large diameter PVT growth of bulk 6H SiC crystals. Materials Science Forum, 338, I/-.