Large excitonic effects in group-IV sulfide monolayers

Blair R. Tuttle, Saeed M. Alhassan, Sokrates T. Pantelides

Research output: Contribution to journalArticle

22 Citations (Scopus)

Abstract

Large exciton binding energies are a distinguishing feature of two-dimensional semiconductors because of reduced screening, potentially leading to unique optoelectronic applications. Here we use electronic structure methods to calculate the properties of a two-dimensional material class: group-IV monosulfides including SiS, GeS, and SnS. Bulk SiS is predicted to be a metastable layered material. Quasiparticle excitations are calculated with the G0W0 method and the Bethe-Salpeter equation is are used to include electron-hole interactions. For monolayers, strongly bound excitons are found below the quasiparticle absorption edge. The predicted excitonic binding energies are as high as 0.7 eV. Due to large excitonic effects, these group-IV sulfide monolayers have great potential for nanoscale optoelectronic applications.

Original languageEnglish (US)
Article number235405
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume92
Issue number23
DOIs
StatePublished - Dec 3 2015

Fingerprint

Sulfides
Binding energy
Excitons
Optoelectronic devices
sulfides
Monolayers
binding energy
excitons
Bethe-Salpeter equation
Electronic structure
Screening
screening
Semiconductor materials
electronic structure
Electrons
excitation
interactions
LDS 751

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

@article{c4f3c5e8157a4f83953ea0db91477813,
title = "Large excitonic effects in group-IV sulfide monolayers",
abstract = "Large exciton binding energies are a distinguishing feature of two-dimensional semiconductors because of reduced screening, potentially leading to unique optoelectronic applications. Here we use electronic structure methods to calculate the properties of a two-dimensional material class: group-IV monosulfides including SiS, GeS, and SnS. Bulk SiS is predicted to be a metastable layered material. Quasiparticle excitations are calculated with the G0W0 method and the Bethe-Salpeter equation is are used to include electron-hole interactions. For monolayers, strongly bound excitons are found below the quasiparticle absorption edge. The predicted excitonic binding energies are as high as 0.7 eV. Due to large excitonic effects, these group-IV sulfide monolayers have great potential for nanoscale optoelectronic applications.",
author = "Tuttle, {Blair R.} and Alhassan, {Saeed M.} and Pantelides, {Sokrates T.}",
year = "2015",
month = "12",
day = "3",
doi = "10.1103/PhysRevB.92.235405",
language = "English (US)",
volume = "92",
journal = "Physical Review B-Condensed Matter",
issn = "1098-0121",
publisher = "American Physical Society",
number = "23",

}

Large excitonic effects in group-IV sulfide monolayers. / Tuttle, Blair R.; Alhassan, Saeed M.; Pantelides, Sokrates T.

In: Physical Review B - Condensed Matter and Materials Physics, Vol. 92, No. 23, 235405, 03.12.2015.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Large excitonic effects in group-IV sulfide monolayers

AU - Tuttle, Blair R.

AU - Alhassan, Saeed M.

AU - Pantelides, Sokrates T.

PY - 2015/12/3

Y1 - 2015/12/3

N2 - Large exciton binding energies are a distinguishing feature of two-dimensional semiconductors because of reduced screening, potentially leading to unique optoelectronic applications. Here we use electronic structure methods to calculate the properties of a two-dimensional material class: group-IV monosulfides including SiS, GeS, and SnS. Bulk SiS is predicted to be a metastable layered material. Quasiparticle excitations are calculated with the G0W0 method and the Bethe-Salpeter equation is are used to include electron-hole interactions. For monolayers, strongly bound excitons are found below the quasiparticle absorption edge. The predicted excitonic binding energies are as high as 0.7 eV. Due to large excitonic effects, these group-IV sulfide monolayers have great potential for nanoscale optoelectronic applications.

AB - Large exciton binding energies are a distinguishing feature of two-dimensional semiconductors because of reduced screening, potentially leading to unique optoelectronic applications. Here we use electronic structure methods to calculate the properties of a two-dimensional material class: group-IV monosulfides including SiS, GeS, and SnS. Bulk SiS is predicted to be a metastable layered material. Quasiparticle excitations are calculated with the G0W0 method and the Bethe-Salpeter equation is are used to include electron-hole interactions. For monolayers, strongly bound excitons are found below the quasiparticle absorption edge. The predicted excitonic binding energies are as high as 0.7 eV. Due to large excitonic effects, these group-IV sulfide monolayers have great potential for nanoscale optoelectronic applications.

UR - http://www.scopus.com/inward/record.url?scp=84950336516&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84950336516&partnerID=8YFLogxK

U2 - 10.1103/PhysRevB.92.235405

DO - 10.1103/PhysRevB.92.235405

M3 - Article

AN - SCOPUS:84950336516

VL - 92

JO - Physical Review B-Condensed Matter

JF - Physical Review B-Condensed Matter

SN - 1098-0121

IS - 23

M1 - 235405

ER -