Large magnetoresistance anisotropy in strained Pr0.67Sr0.33MnO3 thin films

H. S. Wang, Y. F. Hu, E. Wertz, Q. Li

Research output: Contribution to journalConference article

Abstract

We have studied the anisotropic magnetoresistance (AMR) of strained Pr0.67Sr0.33MnO3 thin films by measuring the MR as a function of the angle between the magnetic field direction and the substrate normal (out-of-plane). The results show that the compressive- and tensile-strained ultrathin films (5-15 nm) grown on LaAlO3 (001) (LAO) and SrTiO3 (001) (STO) substrates show unusually large out-of-plane AMR, but with opposite signs. In contrast, the almost strain-free films on the NdGaO3 (110) substrates show much smaller AMR over all the temperature and field ranges studied. Thick films on LAO and STO substrates also show much smaller AMR.

Original languageEnglish (US)
Pages (from-to)87-92
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume602
StatePublished - Dec 1 2000
EventMagnetoresistive Oxides and Related Materials - Boston, MA, United States
Duration: Nov 29 1999Dec 2 1999

Fingerprint

Enhanced magnetoresistance
Magnetoresistance
Anisotropy
Thin films
anisotropy
Substrates
thin films
Ultrathin films
Thick films
thick films
Magnetic fields
magnetic fields
Temperature
temperature

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

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title = "Large magnetoresistance anisotropy in strained Pr0.67Sr0.33MnO3 thin films",
abstract = "We have studied the anisotropic magnetoresistance (AMR) of strained Pr0.67Sr0.33MnO3 thin films by measuring the MR as a function of the angle between the magnetic field direction and the substrate normal (out-of-plane). The results show that the compressive- and tensile-strained ultrathin films (5-15 nm) grown on LaAlO3 (001) (LAO) and SrTiO3 (001) (STO) substrates show unusually large out-of-plane AMR, but with opposite signs. In contrast, the almost strain-free films on the NdGaO3 (110) substrates show much smaller AMR over all the temperature and field ranges studied. Thick films on LAO and STO substrates also show much smaller AMR.",
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Large magnetoresistance anisotropy in strained Pr0.67Sr0.33MnO3 thin films. / Wang, H. S.; Hu, Y. F.; Wertz, E.; Li, Q.

In: Materials Research Society Symposium - Proceedings, Vol. 602, 01.12.2000, p. 87-92.

Research output: Contribution to journalConference article

TY - JOUR

T1 - Large magnetoresistance anisotropy in strained Pr0.67Sr0.33MnO3 thin films

AU - Wang, H. S.

AU - Hu, Y. F.

AU - Wertz, E.

AU - Li, Q.

PY - 2000/12/1

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N2 - We have studied the anisotropic magnetoresistance (AMR) of strained Pr0.67Sr0.33MnO3 thin films by measuring the MR as a function of the angle between the magnetic field direction and the substrate normal (out-of-plane). The results show that the compressive- and tensile-strained ultrathin films (5-15 nm) grown on LaAlO3 (001) (LAO) and SrTiO3 (001) (STO) substrates show unusually large out-of-plane AMR, but with opposite signs. In contrast, the almost strain-free films on the NdGaO3 (110) substrates show much smaller AMR over all the temperature and field ranges studied. Thick films on LAO and STO substrates also show much smaller AMR.

AB - We have studied the anisotropic magnetoresistance (AMR) of strained Pr0.67Sr0.33MnO3 thin films by measuring the MR as a function of the angle between the magnetic field direction and the substrate normal (out-of-plane). The results show that the compressive- and tensile-strained ultrathin films (5-15 nm) grown on LaAlO3 (001) (LAO) and SrTiO3 (001) (STO) substrates show unusually large out-of-plane AMR, but with opposite signs. In contrast, the almost strain-free films on the NdGaO3 (110) substrates show much smaller AMR over all the temperature and field ranges studied. Thick films on LAO and STO substrates also show much smaller AMR.

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