Abstract
We have studied the anisotropic magnetoresistance (AMR) of strained Pr0.67Sr0.33MnO3 thin films by measuring the MR as a function of the angle between the magnetic field direction and the substrate normal (out-of-plane). The results show that the compressive- and tensile-strained ultrathin films (5-15 nm) grown on LaAlO3 (001) (LAO) and SrTiO3 (001) (STO) substrates show unusually large out-of-plane AMR, but with opposite signs. In contrast, the almost strain-free films on the NdGaO3 (110) substrates show much smaller AMR over all the temperature and field ranges studied. Thick films on LAO and STO substrates also show much smaller AMR.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 87-92 |
| Number of pages | 6 |
| Journal | Materials Research Society Symposium - Proceedings |
| Volume | 602 |
| State | Published - Dec 1 2000 |
| Event | Magnetoresistive Oxides and Related Materials - Boston, MA, United States Duration: Nov 29 1999 → Dec 2 1999 |
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All Science Journal Classification (ASJC) codes
- Materials Science(all)
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering
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Large magnetoresistance anisotropy in strained Pr0.67Sr0.33MnO3 thin films. / Wang, H. S.; Hu, Y. F.; Wertz, E.; Li, Qi.
In: Materials Research Society Symposium - Proceedings, Vol. 602, 01.12.2000, p. 87-92.Research output: Contribution to journal › Conference article
TY - JOUR
T1 - Large magnetoresistance anisotropy in strained Pr0.67Sr0.33MnO3 thin films
AU - Wang, H. S.
AU - Hu, Y. F.
AU - Wertz, E.
AU - Li, Qi
PY - 2000/12/1
Y1 - 2000/12/1
N2 - We have studied the anisotropic magnetoresistance (AMR) of strained Pr0.67Sr0.33MnO3 thin films by measuring the MR as a function of the angle between the magnetic field direction and the substrate normal (out-of-plane). The results show that the compressive- and tensile-strained ultrathin films (5-15 nm) grown on LaAlO3 (001) (LAO) and SrTiO3 (001) (STO) substrates show unusually large out-of-plane AMR, but with opposite signs. In contrast, the almost strain-free films on the NdGaO3 (110) substrates show much smaller AMR over all the temperature and field ranges studied. Thick films on LAO and STO substrates also show much smaller AMR.
AB - We have studied the anisotropic magnetoresistance (AMR) of strained Pr0.67Sr0.33MnO3 thin films by measuring the MR as a function of the angle between the magnetic field direction and the substrate normal (out-of-plane). The results show that the compressive- and tensile-strained ultrathin films (5-15 nm) grown on LaAlO3 (001) (LAO) and SrTiO3 (001) (STO) substrates show unusually large out-of-plane AMR, but with opposite signs. In contrast, the almost strain-free films on the NdGaO3 (110) substrates show much smaller AMR over all the temperature and field ranges studied. Thick films on LAO and STO substrates also show much smaller AMR.
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M3 - Conference article
VL - 602
SP - 87
EP - 92
JO - Materials Research Society Symposium - Proceedings
JF - Materials Research Society Symposium - Proceedings
SN - 0272-9172
ER -