Large Photothermal Effect in Sub-40 nm h-BN Nanostructures Patterned Via High-Resolution Ion Beam

Josué J. López, Antonio Ambrosio, Siyuan Dai, Chuong Huynh, David C. Bell, Xiao Lin, Nicholas Rivera, Shengxi Huang, Qiong Ma, Soeren Eyhusen, Ido E. Kaminer, Kenji Watanabe, Takashi Taniguchi, Jing Kong, Dimitri N. Basov, Pablo Jarillo-Herrero, Marin Soljačić

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

The controlled nanoscale patterning of 2D materials is a promising approach for engineering the optoelectronic, thermal, and mechanical properties of these materials to achieve novel functionalities and devices. Herein, high-resolution patterning of hexagonal boron nitride (h-BN) is demonstrated via both helium and neon ion beams and an optimal dosage range for both ions that serve as a baseline for insulating 2D materials is identified. Through this nanofabrication approach, a grating with a 35 nm pitch, individual structure sizes down to 20 nm, and additional nanostructures created by patterning crystal step edges are demonstrated. Raman spectroscopy is used to study the defects induced by the ion beam patterning and is correlated to scanning probe microscopy. Photothermal and scanning near-field optical microscopy measure the resulting near-field absorption and scattering of the nanostructures. These measurements reveal a large photothermal expansion of nanostructured h-BN that is dependent on the height to width aspect ratio of the nanostructures. This effect is attributed to the large anisotropy of the thermal expansion coefficients of h-BN and the nanostructuring implemented. The photothermal expansion should be present in other van der Waals materials with large anisotropy and can lead to applications such as nanomechanical switches driven by light.

Original languageEnglish (US)
Article number1800072
JournalSmall
Volume14
Issue number22
DOIs
StatePublished - May 29 2018

Fingerprint

Boron nitride
Nanostructures
Ion beams
Anisotropy
Ions
Scanning Probe Microscopy
Hot Temperature
Neon
Near field scanning optical microscopy
Scanning probe microscopy
Helium
Raman Spectrum Analysis
Insulating materials
Nanotechnology
Optoelectronic devices
Thermal expansion
Raman spectroscopy
Aspect ratio
Microscopy
Thermodynamic properties

All Science Journal Classification (ASJC) codes

  • Biotechnology
  • Biomaterials
  • Chemistry(all)
  • Materials Science(all)

Cite this

López, J. J., Ambrosio, A., Dai, S., Huynh, C., Bell, D. C., Lin, X., ... Soljačić, M. (2018). Large Photothermal Effect in Sub-40 nm h-BN Nanostructures Patterned Via High-Resolution Ion Beam. Small, 14(22), [1800072]. https://doi.org/10.1002/smll.201800072
López, Josué J. ; Ambrosio, Antonio ; Dai, Siyuan ; Huynh, Chuong ; Bell, David C. ; Lin, Xiao ; Rivera, Nicholas ; Huang, Shengxi ; Ma, Qiong ; Eyhusen, Soeren ; Kaminer, Ido E. ; Watanabe, Kenji ; Taniguchi, Takashi ; Kong, Jing ; Basov, Dimitri N. ; Jarillo-Herrero, Pablo ; Soljačić, Marin. / Large Photothermal Effect in Sub-40 nm h-BN Nanostructures Patterned Via High-Resolution Ion Beam. In: Small. 2018 ; Vol. 14, No. 22.
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abstract = "The controlled nanoscale patterning of 2D materials is a promising approach for engineering the optoelectronic, thermal, and mechanical properties of these materials to achieve novel functionalities and devices. Herein, high-resolution patterning of hexagonal boron nitride (h-BN) is demonstrated via both helium and neon ion beams and an optimal dosage range for both ions that serve as a baseline for insulating 2D materials is identified. Through this nanofabrication approach, a grating with a 35 nm pitch, individual structure sizes down to 20 nm, and additional nanostructures created by patterning crystal step edges are demonstrated. Raman spectroscopy is used to study the defects induced by the ion beam patterning and is correlated to scanning probe microscopy. Photothermal and scanning near-field optical microscopy measure the resulting near-field absorption and scattering of the nanostructures. These measurements reveal a large photothermal expansion of nanostructured h-BN that is dependent on the height to width aspect ratio of the nanostructures. This effect is attributed to the large anisotropy of the thermal expansion coefficients of h-BN and the nanostructuring implemented. The photothermal expansion should be present in other van der Waals materials with large anisotropy and can lead to applications such as nanomechanical switches driven by light.",
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López, JJ, Ambrosio, A, Dai, S, Huynh, C, Bell, DC, Lin, X, Rivera, N, Huang, S, Ma, Q, Eyhusen, S, Kaminer, IE, Watanabe, K, Taniguchi, T, Kong, J, Basov, DN, Jarillo-Herrero, P & Soljačić, M 2018, 'Large Photothermal Effect in Sub-40 nm h-BN Nanostructures Patterned Via High-Resolution Ion Beam', Small, vol. 14, no. 22, 1800072. https://doi.org/10.1002/smll.201800072

Large Photothermal Effect in Sub-40 nm h-BN Nanostructures Patterned Via High-Resolution Ion Beam. / López, Josué J.; Ambrosio, Antonio; Dai, Siyuan; Huynh, Chuong; Bell, David C.; Lin, Xiao; Rivera, Nicholas; Huang, Shengxi; Ma, Qiong; Eyhusen, Soeren; Kaminer, Ido E.; Watanabe, Kenji; Taniguchi, Takashi; Kong, Jing; Basov, Dimitri N.; Jarillo-Herrero, Pablo; Soljačić, Marin.

In: Small, Vol. 14, No. 22, 1800072, 29.05.2018.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Large Photothermal Effect in Sub-40 nm h-BN Nanostructures Patterned Via High-Resolution Ion Beam

AU - López, Josué J.

AU - Ambrosio, Antonio

AU - Dai, Siyuan

AU - Huynh, Chuong

AU - Bell, David C.

AU - Lin, Xiao

AU - Rivera, Nicholas

AU - Huang, Shengxi

AU - Ma, Qiong

AU - Eyhusen, Soeren

AU - Kaminer, Ido E.

AU - Watanabe, Kenji

AU - Taniguchi, Takashi

AU - Kong, Jing

AU - Basov, Dimitri N.

AU - Jarillo-Herrero, Pablo

AU - Soljačić, Marin

PY - 2018/5/29

Y1 - 2018/5/29

N2 - The controlled nanoscale patterning of 2D materials is a promising approach for engineering the optoelectronic, thermal, and mechanical properties of these materials to achieve novel functionalities and devices. Herein, high-resolution patterning of hexagonal boron nitride (h-BN) is demonstrated via both helium and neon ion beams and an optimal dosage range for both ions that serve as a baseline for insulating 2D materials is identified. Through this nanofabrication approach, a grating with a 35 nm pitch, individual structure sizes down to 20 nm, and additional nanostructures created by patterning crystal step edges are demonstrated. Raman spectroscopy is used to study the defects induced by the ion beam patterning and is correlated to scanning probe microscopy. Photothermal and scanning near-field optical microscopy measure the resulting near-field absorption and scattering of the nanostructures. These measurements reveal a large photothermal expansion of nanostructured h-BN that is dependent on the height to width aspect ratio of the nanostructures. This effect is attributed to the large anisotropy of the thermal expansion coefficients of h-BN and the nanostructuring implemented. The photothermal expansion should be present in other van der Waals materials with large anisotropy and can lead to applications such as nanomechanical switches driven by light.

AB - The controlled nanoscale patterning of 2D materials is a promising approach for engineering the optoelectronic, thermal, and mechanical properties of these materials to achieve novel functionalities and devices. Herein, high-resolution patterning of hexagonal boron nitride (h-BN) is demonstrated via both helium and neon ion beams and an optimal dosage range for both ions that serve as a baseline for insulating 2D materials is identified. Through this nanofabrication approach, a grating with a 35 nm pitch, individual structure sizes down to 20 nm, and additional nanostructures created by patterning crystal step edges are demonstrated. Raman spectroscopy is used to study the defects induced by the ion beam patterning and is correlated to scanning probe microscopy. Photothermal and scanning near-field optical microscopy measure the resulting near-field absorption and scattering of the nanostructures. These measurements reveal a large photothermal expansion of nanostructured h-BN that is dependent on the height to width aspect ratio of the nanostructures. This effect is attributed to the large anisotropy of the thermal expansion coefficients of h-BN and the nanostructuring implemented. The photothermal expansion should be present in other van der Waals materials with large anisotropy and can lead to applications such as nanomechanical switches driven by light.

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López JJ, Ambrosio A, Dai S, Huynh C, Bell DC, Lin X et al. Large Photothermal Effect in Sub-40 nm h-BN Nanostructures Patterned Via High-Resolution Ion Beam. Small. 2018 May 29;14(22). 1800072. https://doi.org/10.1002/smll.201800072