Large-signal MESFET characterization using harmonic balance.

Benjamin R. Epstein, Stewart M. Perlow, David L. Rhodes, Jonathan L. Schepps, Morris M. Ettenberg, Russell Richard Barton

Research output: Contribution to journalConference article

8 Citations (Scopus)

Abstract

A method is described that combines large-signal load tuning (i.e., load-pull) measurements with harmonic balance and optimization techniques to characterize GaAs MESFET devices. An important advantage of the method is that device model parameters are obtained at the frequencies at which the device will operate in circuits. Consequently, ambiguities regarding any frequency dependencies of the parameters are eliminated, thereby improving the accuracy of the device model and simulation. The method is best suited as a supplement to previously reported DC and small-signal parameter extraction methods, and is also applicable for the characterization of other power device types, including bipolar-junction transistors (BJTs).

Original languageEnglish (US)
Pages (from-to)1045-1048
Number of pages4
JournalIEEE MTT-S International Microwave Symposium Digest
Volume1988
StatePublished - Dec 1 1988

Fingerprint

field effect transistors
MESFET devices
harmonics
Parameter extraction
Bipolar transistors
Tuning
Networks (circuits)
junction transistors
supplements
bipolar transistors
ambiguity
direct current
tuning
optimization
simulation

All Science Journal Classification (ASJC) codes

  • Radiation
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Cite this

Epstein, B. R., Perlow, S. M., Rhodes, D. L., Schepps, J. L., Ettenberg, M. M., & Barton, R. R. (1988). Large-signal MESFET characterization using harmonic balance. IEEE MTT-S International Microwave Symposium Digest, 1988, 1045-1048.
Epstein, Benjamin R. ; Perlow, Stewart M. ; Rhodes, David L. ; Schepps, Jonathan L. ; Ettenberg, Morris M. ; Barton, Russell Richard. / Large-signal MESFET characterization using harmonic balance. In: IEEE MTT-S International Microwave Symposium Digest. 1988 ; Vol. 1988. pp. 1045-1048.
@article{7255ac901b654fcbbd81bd437c475b4a,
title = "Large-signal MESFET characterization using harmonic balance.",
abstract = "A method is described that combines large-signal load tuning (i.e., load-pull) measurements with harmonic balance and optimization techniques to characterize GaAs MESFET devices. An important advantage of the method is that device model parameters are obtained at the frequencies at which the device will operate in circuits. Consequently, ambiguities regarding any frequency dependencies of the parameters are eliminated, thereby improving the accuracy of the device model and simulation. The method is best suited as a supplement to previously reported DC and small-signal parameter extraction methods, and is also applicable for the characterization of other power device types, including bipolar-junction transistors (BJTs).",
author = "Epstein, {Benjamin R.} and Perlow, {Stewart M.} and Rhodes, {David L.} and Schepps, {Jonathan L.} and Ettenberg, {Morris M.} and Barton, {Russell Richard}",
year = "1988",
month = "12",
day = "1",
language = "English (US)",
volume = "1988",
pages = "1045--1048",
journal = "IEEE MTT-S International Microwave Symposium Digest",
issn = "0149-645X",
publisher = "Institute of Electrical and Electronics Engineers Inc.",

}

Epstein, BR, Perlow, SM, Rhodes, DL, Schepps, JL, Ettenberg, MM & Barton, RR 1988, 'Large-signal MESFET characterization using harmonic balance.', IEEE MTT-S International Microwave Symposium Digest, vol. 1988, pp. 1045-1048.

Large-signal MESFET characterization using harmonic balance. / Epstein, Benjamin R.; Perlow, Stewart M.; Rhodes, David L.; Schepps, Jonathan L.; Ettenberg, Morris M.; Barton, Russell Richard.

In: IEEE MTT-S International Microwave Symposium Digest, Vol. 1988, 01.12.1988, p. 1045-1048.

Research output: Contribution to journalConference article

TY - JOUR

T1 - Large-signal MESFET characterization using harmonic balance.

AU - Epstein, Benjamin R.

AU - Perlow, Stewart M.

AU - Rhodes, David L.

AU - Schepps, Jonathan L.

AU - Ettenberg, Morris M.

AU - Barton, Russell Richard

PY - 1988/12/1

Y1 - 1988/12/1

N2 - A method is described that combines large-signal load tuning (i.e., load-pull) measurements with harmonic balance and optimization techniques to characterize GaAs MESFET devices. An important advantage of the method is that device model parameters are obtained at the frequencies at which the device will operate in circuits. Consequently, ambiguities regarding any frequency dependencies of the parameters are eliminated, thereby improving the accuracy of the device model and simulation. The method is best suited as a supplement to previously reported DC and small-signal parameter extraction methods, and is also applicable for the characterization of other power device types, including bipolar-junction transistors (BJTs).

AB - A method is described that combines large-signal load tuning (i.e., load-pull) measurements with harmonic balance and optimization techniques to characterize GaAs MESFET devices. An important advantage of the method is that device model parameters are obtained at the frequencies at which the device will operate in circuits. Consequently, ambiguities regarding any frequency dependencies of the parameters are eliminated, thereby improving the accuracy of the device model and simulation. The method is best suited as a supplement to previously reported DC and small-signal parameter extraction methods, and is also applicable for the characterization of other power device types, including bipolar-junction transistors (BJTs).

UR - http://www.scopus.com/inward/record.url?scp=0024126736&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0024126736&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0024126736

VL - 1988

SP - 1045

EP - 1048

JO - IEEE MTT-S International Microwave Symposium Digest

JF - IEEE MTT-S International Microwave Symposium Digest

SN - 0149-645X

ER -

Epstein BR, Perlow SM, Rhodes DL, Schepps JL, Ettenberg MM, Barton RR. Large-signal MESFET characterization using harmonic balance. IEEE MTT-S International Microwave Symposium Digest. 1988 Dec 1;1988:1045-1048.